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MT29F8G16BABWPXXXXET

Description
Flash, 512MX16, PDSO48, LEAD FREE, TSOP1-48
Categorystorage    storage   
File Size731KB,57 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance  
Download Datasheet Parametric View All

MT29F8G16BABWPXXXXET Overview

Flash, 512MX16, PDSO48, LEAD FREE, TSOP1-48

MT29F8G16BABWPXXXXET Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeTSOP1
package instructionLEAD FREE, TSOP1-48
Contacts48
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
JESD-30 codeR-PDSO-G48
JESD-609 codee3
length18.4 mm
memory density8589934592 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count536870912 words
character code512000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage2.7 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
typeSLC NAND TYPE
width12 mm
2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory
Features
NAND Flash Memory
MT29F2G08AABWP/MT29F2G16AABWP
MT29F4G08BABWP/MT29F4G16BABWP
MT29F8G08FABWP
Features
• Organization:
• Page size:
x8: 2,112 bytes (2,048 + 64 bytes)
x16: 1,056 words (1,024 + 32 words)
• Block size: 64 pages (128K + 4K bytes)
• Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks;
8Gb: 8,192 blocks
• Read performance:
• Random read: 25µs
• Sequential read: 30ns (3V x8 only)
• Write performance:
• Page program: 300µs (typ)
• Block erase: 2ms (typ)
• Endurance: PROGRAM/ERASE cycles
(with ECC and invalid block mapping)
• First block (block address 00h) guaranteed to be
valid without ECC (up to 1,000 PROGRAM/ERASE
cycles)
• V
CC
: 2.7V–3.6V
• Automated PROGRAM and ERASE
• Basic NAND command set:
• PAGE READ, RANDOM DATA READ, READ ID,
READ STATUS, PROGRAM PAGE, RANDOM
DATA INPUT, PROGRAM PAGE CACHE MODE,
INTERNAL DATA MOVE, INTERNAL DATA MOVE
with RANDOM DATA INPUT, BLOCK ERASE,
RESET
• New commands:
• PAGE READ CACHE MODE
• READ UNIQUE ID (contact factory)
• READ ID2 (contact factory)
• Operation status byte provides a software method of
detecting:
• PROGRAM/ERASE operation completion
• PROGRAM/ERASE pass/fail condition
• Write-protect status
• Ready/busy# (R/B#) pin provides a hardware
method of detecting PROGRAM or ERASE cycle
completion
• PRE pin: prefetch on power up
• WP# pin: hardware write protect
09005aef818a56a7 pdf/09005aef81590bdd source
2gb_nand_m29b__1.fm - Rev. C 5/05 EN
Figure 1:
48-PIN TSOP Type 1
Options
Marking
• Density:
MT29F2GxxAAB
2Gb (single die)
MT29F4GxxBAB
4Gb (dual-die stack)
MT29F8GxxFAB
8Gb (quad-die stack)
• Device width:
MT29Fxx08x
x8
MT29Fxx16x
x16
• Configuration: # of die # of CE# # of R/B#
1
1
1
A
2
1
1
B
4
2
2
F
A
• V
CC
: 2.7V–3.6V
• Second generation die
B
• Package:
48 TSOP type I (lead-free plating)
WP
48 TSOP type I (contact factory)
WG
• Operating temperature:
Commercial (0–70°C)
Extended temperature
ET
(-40°C to +85°C)
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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