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DB1P

Description
1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size749KB,4 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
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DB1P Overview

1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

DB1P Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerRochester Electronics
package instructionR-PDIP-T4
Reach Compliance Codeunknown
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PDIP-T4
JESD-609 codee0
Humidity sensitivity levelNOT SPECIFIED
Maximum non-repetitive peak forward current50 A
Number of components4
Phase1
Number of terminals4
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusCOMMERCIAL
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

DB1P Preview

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DB1P Related Products

DB1P DB1D DB1A DB1F DB1N DB1M DB1B
Description 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics
package instruction R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4
JESD-609 code e0 e0 e0 e0 e0 e0 e0
Humidity sensitivity level NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum non-repetitive peak forward current 50 A 50 A 50 A 50 A 50 A 50 A 50 A
Number of components 4 4 4 4 4 4 4
Phase 1 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4 4
Maximum output current 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Maximum repetitive peak reverse voltage 1000 V 400 V 100 V 50 V 800 V 600 V 200 V
surface mount NO NO NO NO NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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