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M28F102-90N3TR

Description
64KX16 FLASH 12V PROM, 90ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40
Categorystorage    storage   
File Size175KB,20 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

M28F102-90N3TR Overview

64KX16 FLASH 12V PROM, 90ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40

M28F102-90N3TR Parametric

Parameter NameAttribute value
MakerSTMicroelectronics
Parts packaging codeTSOP
package instruction10 X 14 MM, PLASTIC, TSOP-40
Contacts40
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time90 ns
JESD-30 codeR-PDSO-G40
length12.4 mm
memory density1048576 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals40
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize64KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Programming voltage12 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyMOS
Temperature levelAUTOMOTIVE
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
typeNOR TYPE
width10 mm
M28F102
1 Megabit (64K x 16, Chip Erase) FLASH MEMORY
FAST ACCESS TIME: 90ns
LOW POWER CONSUMPTION
– Standby Current: 100µA Max
10,000 ERASE/PROGRAM CYCLES
12V PROGRAMMING VOLTAGE
TYPICAL BYTE PROGRAMMING TIME 10µs
(PRESTO F ALGORITHM)
ELECTRICAL CHIP ERASE in 1s RANGE
INTEGRATED ERASE/PROGRAM-STOP
TIMER
OTP COMPATIBLE PACKAGES and
PINOUTS for PLCC44 and TSOP40
EXTENDED TEMPERATURE RANGES
PLCC44 (K)
TSOP40 (N)
10 x 14mm
Figure 1. Logic Diagram
DESCRIPTION
The M28F102 FLASH MEMORY is a non-volatile
memory which may be erased electrically at the
chip level and programmed word-by-word. It is
organised as 64K words of 16 bits. It uses a com-
mand register architecture to select the operating
modes and thus provides a simple microprocessor
interface. The M28F102 FLASH MEMORY is suit-
able for applications where the memory has to be
reprogrammed in the equipment. The access time
of 100ns makes the device suitable for use in high
speed microprocessor systems.
Table 1. Signal Names
A0 - A15
DQ0 - DQ15
E
G
W
V
PP
V
CC
V
SS
Address Inputs
Data Inputs / Outputs
Chip Enable
Output Enable
Write Enable
Program Supply
Supply Voltage
Ground
VCC
VPP
16
A0-A15
16
DQ0-DQ15
W
E
G
M28F102
VSS
AI00627B
September 1995
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