SSD30N15-60D
Elektronische Bauelemente
22A , 150V , R
DS(ON)
69m
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFET utilize a
high cell density trench process to provide low R
DS(on)
and to ensure minimal power loss and heat dissipation.
TO-252(D-Pack)
FEATURES
Low R
DS(on)
provides higher efficiency and extends
battery life
Low thermal impedance copper leadframe TO-252
saves board space
Fast switching speed
High performance trench technology
A
B
C
D
GE
APPLICATION
DC-DC converters and power management in portable and
battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
M
REF.
K
HF
N
O
P
J
PACKAGE INFORMATION
Package
TO-252
MPQ
2.5K
Leader Size
13 inch
A
B
C
D
E
F
G
H
Millimeter
Min.
Max.
6.35
6.80
5.20
5.50
2.15
2.40
0.45
0.58
6.8
7.5
2.40
3.0
5.40
6.25
0.64
1.20
REF.
J
K
M
N
O
P
Millimeter
Min.
Max.
2.30 REF.
0.64
0.90
0.50
1.1
0.9
1.65
0
0.15
0.43
0.58
2
Drain
1
Gate
3
Source
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
2
1
1
Symbol
V
DS
V
GS
T
C
=25°
C
I
D
I
DM
I
S
P
D
T
J
, T
STG
Rating
150
±20
22
60
51
50
-55~175
Unit
V
V
A
A
A
W
°
C
Continuous Source Current (Diode Conduction)
Total Power Dissipation
1
T
C
=25°
C
Operating Junction and Storage Temperature Range
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient
Maximum Thermal Resistance Junction-Case
Note:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature
1
R
θJA
R
θJC
40
3
° /W
C
° /W
C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
16-Apr-2013 Rev. A
Page 1 of 4
SSD30N15-60D
Elektronische Bauelemente
22A , 150V , R
DS(ON)
69m
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
V
GS(th)
I
GSS
I
DSS
I
D(on)
1
1
-
-
-
40
-
-
-
-
-
-
-
-
-
38
0.8
2
-
±100
1
25
-
69
110
-
-
V
nA
µA
A
m
S
V
V
DS
=V
GS,
I
D
=250µA
V
DS
=0, V
GS
=±20V
V
DS
=120V, V
GS
=0
V
DS
=120V, V
GS
=0, T
J
=55°
C
V
DS
=5V, V
GS
=10V
V
GS
=10V, I
D
=10A
V
GS
=5.5V, I
D
=8A
V
DS
=15V, I
D
=10A
I
S
=25.3A, V
GS
=0
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
1
R
DS(ON)
g
fs
V
SD
-
-
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
-
-
-
-
-
-
-
-
-
-
24
7.8
9.7
13
22
64
36
-
-
-
-
-
-
-
-
-
-
pF
nS
nC
V
DS
=75V
V
GS
=5.5V
I
D
=10A
V
DS
=75V
I
D
=10A
V
GEN
=10V
R
L
=7.5
R
GEN
=6
V
GS
=0
V
DS
=15 V
f =1.0MHz
2599
167
90
Notes:
1. Pulse test：Pulse width≦300
µs,
duty cycle≦2％.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
16-Apr-2013 Rev. A
Page 2 of 4
SSD30N15-60D
Elektronische Bauelemente
22A , 150V , R
DS(ON)
69m
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
16-Apr-2013 Rev. A
Page 3 of 4
SSD30N15-60D
Elektronische Bauelemente
22A , 150V , R
DS(ON)
69m
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
16-Apr-2013 Rev. A
Page 4 of 4
Sensor
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