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MQSMBJ2K4.0E3TR

Description
Trans Voltage Suppressor Diode, 300W, 4V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size169KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

MQSMBJ2K4.0E3TR Overview

Trans Voltage Suppressor Diode, 300W, 4V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN

MQSMBJ2K4.0E3TR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
Parts packaging codeDO-214AA
package instructionPLASTIC, SMBJ, 2 PIN
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage5 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation300 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1.38 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage4 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
SMBJ2K3.0 thru SMBJ2K5.0, e3
SMBG2K3.0 thru SMBG2K5.0, e3
SCOTTSDALE DIVISION
UNIDIRECTIONAL LOW VOLTAGE
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
APPEARANCE
WWW .
Microsemi
.C
OM
DESCRIPTION
The SMBJ2K3.0-5.0 or SMBG2K3.0-5.0 series of surface mount 2000 Watt
unidirectional Transient Voltage Suppressors (TVSs) provide low voltage
transient protection in a Working Standoff Voltage (V
WM
) selections from 3.0
to 5.0 volts. Response time of clamping action is virtually instantaneous and
may also be used for protection from ESD or EFT per IEC61000-4-2 and
IEC61000-4-4, or for inductive switching environments and induced RF.
They can also be used for protecting other sensitive components from
secondary lightning effects per IEC61000-4-5 and class levels defined
herein. Microsemi also offers numerous other TVS products to meet higher
and lower power demands and special applications. Also available in military
equivalent screening levels by adding a prefix identifier as further described
in the Features section. Microsemi also offers numerous other TVS products
to meet higher and lower power applications.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
Suppresses transients up to 2000 watts @ 8/20 µs (see
Figure 1 and 2)
Fast response
Optional 100%
screening for avionics grade
is available
by adding MA prefix to part number for added 100%
temperature cycle -55
o
C to +125
o
C (10X) as well as surge
(3X) and 24 hours HTRB with post test V
Z
& I
R
(in the
operating direction for unidirectional or both directions for
bidirectional)
Options for screening in accordance with MIL-PRF-19500
for JAN, JANTX, and JANTXV are available by adding
MQ, MX, or MV prefixes respectively to part numbers.
Moisture classification is Level 1 with no dry pack required
per IPC/JEDEC J-STD-020B
RoHS Compliant devices available by adding “e3” suffix
Consult factory for bidirectional options
APPLICATIONS / BENEFITS
Selections for 3.0 to 5.0 V Working Peak Standoff
(V
WM
) voltage
Economical unidirectional TVS series in surface
mount with flat handling surface for accurate
placement
Voltage and reverse (leakage) current lowest
available
Protects sensitive components such as IC’s,
2
CMOS, Bipolar, BiCMOS, ECL, DTL, T L, etc.
Protection from switching transients & induced RF
Compliant to IEC61000-4-2 and IEC61000-4-4 for
ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance for Class 1
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25
o
C: 2000 watts at 8/20
μs
or 300 Watts at 10/1000
μs
(also see Figure 1 and 4)
Clamping Voltage at 10 Amps @ 8/20
μs
shown on page 2
Impulse repetition rate (duty factor): 0.01% maximum
t
clamping
(0 volts to
V
(BR)
min.): < 100 ps
Operating and Storage temperature: -65
o
C to +150
o
C
º
º
Thermal resistance: 25 C/W junction to lead, or 90 C/W
junction to ambient when mounted on FR4 PC board (1oz
Cu) with recommended footprint (see last page)
Steady-State Power dissipation: 5 watts at T
L
= 25
o
C, or
1.38 watts at T
A
= 25
º
C when mounted on FR4 PC board
with recommended footprint
Forward Voltage at 25
o
C: 3.5 Volts maximum @ 30 Amp
peak impulse of 8.3 ms half-sine wave (unidirectional only)
Solder temperatures: 260
o
C for 10 s (maximum)
Copyright
©
2007
6-21-2007 REV G
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
FINISH: Tin-Lead or RoHS compliant annealed
matte-Tin plating over copper readily solderable
per MIL-STD-750, method 2026
MARKING: Body marked without SMBJ or SMBG
part number prefix, e.g. 2K3.0, 2K3.3, 2K4.0, etc.
POLARITY: Band denotes cathode
WEIGHT: 0.1 grams (approximate)
TAPE & REEL option: Standard per EIA-481-1-A
with 12 mm tape, 750 per 7 inch reel or 2500 per
13 inch reel (add “TR” suffix to part number)
See package dimensions on last page
SMBG&J2K3.0-5.0
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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