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Am29F400AT-65EI

Description
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
Categorystorage    storage   
File Size147KB,35 Pages
ManufacturerAMD
Websitehttp://www.amd.com
Download Datasheet Parametric View All

Am29F400AT-65EI Overview

4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

Am29F400AT-65EI Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerAMD
Parts packaging codeTSOP
package instructionTSOP-48
Contacts48
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time60 ns
Other features100K WRITE/ERASE CYCLES MIN; CONFIGURABLE AS 256K X 16
Spare memory width8
startup blockTOP
command user interfaceYES
Data pollingYES
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDSO-G48
JESD-609 codee0
length18.4 mm
memory density4194304 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size1,2,1,7
Number of terminals48
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP48,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size16K,8K,32K,64K
Maximum standby current0.000005 A
Maximum slew rate0.05 mA
Maximum supply voltage (Vsup)5.25 V
Minimum supply voltage (Vsup)4.75 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
switch bitYES
typeNOR TYPE
width12 mm
PRELIMINARY
Am29F400AT/Am29F400AB
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only,
Sector Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s
5.0 V
±
10% for read and write operations
— Minimizes system level power requirements
s
Compatible with JEDEC-standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
s
Package options
— 44-pin SO
— 48-pin TSOP
s
Minimum 100,000 write/erase cycles guaranteed
s
High performance
— 60 ns maximum access time
s
Sector erase architecture
— One 16 Kbyte, two 8 Kbytes, one 32 Kbyte, and
seven 64 Kbytes
— Any combination of sectors can be erased. Also
supports full chip erase.
s
Sector protection
— Hardware method that disables any combination
of sectors from write or erase operations.
Implemented using standard PROM
programming equipment.
s
Embedded Erase
Algorithms
— Automatically preprograms and erases the chip
or any sector
s
Embedded Program
Algorithms
— Automatically programs and verifies data at
specified address
s
Data Polling and Toggle Bit feature for detection
of program or erase cycle completion
s
Ready/Busy output (RY/BY)
— Hardware method for detection of program or
erase cycle completion
s
Erase Suspend/Resume
— Supports reading data from a sector not being
erased
s
Low power consumption
— 20 mA typical active read current for Byte Mode
— 28 mA typical active read current for Word Mode
— 30 mA typical program/erase current
s
Enhanced power management for standby
mode
— 1
µ
A typical standby current
s
Boot Code Sector Architecture
— T = Top sector
— B = Bottom sector
s
Hardware RESET pin
— Resets internal state machine to the read mode
5.0 V-only Flash
GENERAL DESCRIPTION
The Am29F400A is a 4 Mbit, 5.0 Volt-only Flash memory
organized as 512 Kbytes of 8 bits each or 256 Kwords
of 16 bits each. The 4 Mbits of data is divided into 11
sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte,
and seven 64 Kbytes, for flexible erase capability. The
8 bits of data will appear on DQ0–DQ7 or 16 bits on
DQ0–DQ15. The Am29F400A is offered in 44-pin SO
and 48-pin TSOP packages. This device is designed
to be programmed in-system with the standard system
5.0 Volt V
CC
supply. 12.0 Volt V
PP
is not required for
program or erase operations. The device can also be re-
programmed in standard EPROM programmers.
The standard Am29F400A offers access times of
60 ns, 70 ns, 90 ns, 120 ns and 150 ns, allowing high
speed microprocessors to operate without wait states.
To eliminate bus contention the device has sepa-
rate chip enable (CE), write enable (WE) and output
enable (OE) controls.
The Am29F400A is entirely command set compatible
with the JEDEC single-power-supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state-machine
which controls the erase and programming circuitry.
Publication#
20380
Rev:
B
Amendment/0
Issue Date:
April 1997
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
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