IPA65R190CFDXKSA1 datasheet, PDF

IPA65R190CFDXKSA1: Description17.5 A, 650 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size4MB，20 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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17.5 A, 650 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compliant
Factory Lead Time	18 weeks
Avalanche Energy Efficiency Rating (Eas)	484 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	650 V
Maximum drain current (Abs) (ID)	17.5 A
Maximum drain current (ID)	17.5 A
Maximum drain-source on-resistance	0.19 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	34 W
Maximum pulsed drain current (IDM)	57.2 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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