PD - 91879A
IRF7207
HEXFET
®
Power MOSFET
l
l
l
l
l
l
Generation 5 Technology
P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
S
1
8
7
A
D
D
D
D
S
S
G
2
V
DSS
= -20V
3
6
4
5
R
DS(on)
= 0.06Ω
Description
Fifth Generation HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in a
typical PCB mount application.
T op V ie w
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 70°C
V
GS
V
GSM
E
AS
dv/dt
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
-20
-5.4
-4.3
-43
2.5
1.6
0.02
± 12
-16
140
-5.0
-55 to + 150
Units
V
A
W
W/°C
V
V
V/ns
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Typ.
–––
Max.
50
Units
°C/W
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1
6/5/00
IRF7207
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-20
–––
–––
–––
-0.7
8.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.011
–––
–––
–––
–––
–––
–––
–––
–––
15
2.2
5.7
11
24
43
41
780
410
200
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
––– V/°C Reference to 25°C, I
D
= -1mA
0.06
V
GS
= -4.5V, I
D
= -5.4A
Ω
0.10
V
GS
= -2.7V, I
D
= -2.7A
–––
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -10V, I
D
= -5.4A
-1.0
V
DS
= -16V, V
GS
= 0V
µA
-25
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
-100
V
GS
= 12V
nA
100
V
GS
= -12V
22
I
D
= -5.4A
3.3
nC
V
DS
= -10V
8.6
V
GS
= -4.5V,
–––
V
DD
= -10V
–––
I
D
= -1.0A
ns
–––
R
G
= 6.0Ω
–––
R
D
= 10Ω,
–––
V
GS
= 0V
–––
pF
V
DS
= -15V
–––
ƒ = 1.0MHz,
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
42
50
-3.1
A
-43
-1.0
63
75
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -3.1A, V
GS
= 0V
T
J
= 25°C, I
F
= -3.1A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
I
SD
≤
-5.4A, di/dt
≤
-79A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Starting T
J
= 25°C, L = 9.6mH
R
G
= 25Ω, I
AS
= -5.4A.
Pulse width
≤
300µs; duty cycle
≤
2%.
When mounted on 1 inch square copper board, t<10 sec
2
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IRF7207
100
-I
D
, Drain-to-Source Current (A)
-I
D
, Drain-to-Source Current (A)
VGS
TOP
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
100
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
TOP
10
10
-2.25V
20µs PULSE WIDTH
T = 25 C
J
°
1
10
-2.25V
1
0.1
1
0.1
20µs PULSE WIDTH
T = 150 C
J
°
1
10
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
I
D
= -5.4A
T
J
= 25
°
C
T
J
= 150
°
C
10
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
-I
D
, Drain-to-Source Current (A)
1.5
1.0
0.5
1
2.0
V DS = -10V
20µs PULSE WIDTH
5.0
3.0
4.0
6.0
0.0
-60 -40 -20
V
GS
=
-4.5V
-10V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7207
1600
-V
GS
, Gate-to-Source Voltage (V)
1200
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
I
D
= -5.4A
8
V
DS
= -10V
C, Capacitance (pF)
Ciss
800
6
C
oss
400
4
C
rss
2
0
1
10
100
0
0
5
10
FOR TEST CIRCUIT
SEE FIGURE 13
20
25
15
30
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
-I
D
, Drain Current (A)
I
T
J
= 150
°
C
100us
10
1
T
J
= 25
°
C
1ms
0.1
0.4
V
GS
= 0 V
0.6
0.7
0.9
1.1
1.2
1.4
1
T
A
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
10ms
100
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7207
6.0
400
5.0
E
AS
, Single Pulse Avalanche Energy (mJ)
-I
D
, Drain Current (A)
300
ID
TOP
-2.4A
-4.3A
BOTTOM -5.4A
4.0
3.0
200
2.0
100
1.0
0.0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
, Case Temperature
( °C)
Starting T
J
, Junction Temperature (
°
C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
100
Thermal Response (Z
thJA
)
D = 0.50
10
0.20
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
1
10
P
DM
t
1
t
2
100
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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