PD -96257
IRF8910GPbF
HEXFET
®
Power MOSFET
Applications
l
Dual SO-8 MOSFET for POL
converters in desktop, servers,
graphics cards, game consoles
and set-top box
l
l
V
DSS
20V
13.4m
:
@V
GS
= 10V
1
2
3
4
R
DS(on)
max
I
D
10A
Lead-Free
Halogen-Free
S1
G1
8
7
6
5
D1
D1
D2
D2
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
l
20V V
GS
Max. Gate Rating
S2
G2
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
20
± 20
10
8.3
82
2.0
1.3
0.016
-55 to + 150
Units
V
c
A
W
W/°C
°C
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
f
g
Typ.
–––
–––
Max.
42
62.5
Units
°C/W
Notes
through
are on page 10
www.irf.com
1
7/10/09
IRF8910GPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
20
–––
–––
–––
1.65
–––
–––
–––
–––
–––
24
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.015
10.7
14.6
–––
-4.8
–––
–––
–––
–––
–––
7.4
2.4
0.80
2.5
1.7
3.3
4.4
6.2
10
9.7
4.1
960
300
160
–––
–––
13.4
18.3
2.55
–––
1.0
150
100
-100
–––
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
pF
nC
ns
nC
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 10A
V
V
GS
= 4.5V, I
D
V
DS
= V
GS
, I
D
= 250µA
e
= 8.0A
e
mV/°C
µA V
DS
= 16V, V
GS
= 0V
nA
S
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 8.2A
V
DS
= 10V
V
GS
= 4.5V
I
D
= 8.2A
See Fig. 6
V
DS
= 10V, V
GS
= 0V
V
DD
= 10V, V
GS
= 4.5V
I
D
= 8.2A
Clamped Inductive Load
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
Max.
19
8.2
Units
mJ
A
Avalanche Characteristics
E
AS
I
AR
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
17
6.5
2.5
A
82
1.0
26
9.7
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
S
p-n junction diode.
T
J
= 25°C, I
S
= 8.2A, V
GS
= 0V
T
J
= 25°C, I
F
= 8.2A, V
DD
= 10V
di/dt = 100A/µs
e
e
2
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IRF8910GPbF
100
TOP
VGS
10V
8.0V
5.5V
4.5V
3.5V
3.0V
2.8V
2.5V
100
TOP
VGS
10V
8.0V
5.5V
4.5V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
1
10
2.5V
0.1
≤
60µs PULSE WIDTH
0.01
0.1
1
Tj = 25°C
1
100
0.1
10
2.5V
≤
60µs PULSE WIDTH
Tj = 150°C
10
100
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
1.5
10
T J = 150°C
1
T J = 25°C
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
ID = 10A
VGS = 10V
1.0
0.1
1
2
3
VDS = 10V
≤60µs
PULSE WIDTH
4
5
6
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRF8910GPbF
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
6.0
ID= 8.2A
VGS, Gate-to-Source Voltage (V)
5.0
4.0
3.0
2.0
1.0
0.0
VDS= 16V
VDS= 10V
C, Capacitance(pF)
1000
Ciss
Coss
Crss
100
1
10
100
0
1
2
3
4
5
6
7
8
9
10
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10.00
T J = 150°C
1.00
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100µsec
1msec
0.10
T J = 25°C
1
0.01
0.2
0.4
0.6
0.8
1.0
VGS = 0V
T A = 25°C
Tj = 150°C
Single Pulse
0
1
10
10msec
0.1
1.2
1.4
1.6
100
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF8910GPbF
10
VGS(th) Gate threshold Voltage (V)
2.5
9
8
ID, Drain Current (A)
7
6
5
4
3
2
1
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
2.0
ID = 250µA
1.5
1.0
-75
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
Fig 10.
Threshold Voltage vs. Temperature
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
1
0.02
0.01
τ
J
τ
J
τ
1
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
4
R
5
R
5
τ
5
Ri (°C/W)
1.2647
τ
C
τ
C
τi
(sec)
0.000091
0.000776
0.188739
0.757700
2.0415
18.970
23.415
τ
2
τ
3
τ
4
τ
5
0.1
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci=
τi/Ri
16.803
25.10000
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.1
1
10
100
0.01
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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