PD - 95555A
SMPS MOSFET
IRLR3715PbF
IRLU3715PbF
HEXFET
®
Power MOSFET
Applications
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Computer Processor Power
l
Lead-Free
Benefits
l
Ultra-Low Gate Impedance
l
Very Low R
DS(on)
at 4.5V V
GS
l
Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
T
J
, T
STG
V
DSS
20V
R
DS(on)
max
14mΩ
I
D
54A
D-Pak
IRLR3715
I-Pak
IRLU3715
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
20
± 20
54
38
210
71
3.8
0.48
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Typ.
–––
–––
–––
Max.
2.1
110
50
Units
°C/W
Notes
through
are on page 10
www.irf.com
1
12/6/04
IRLR/U3715PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Min.
20
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.022
11
15
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
14
V
GS
= 10V, I
D
= 26A
mΩ
20
V
GS
= 4.5V, I
D
= 21A
3.0
V
V
DS
= V
GS
, I
D
= 250µA
20
V
DS
= 16V, V
GS
= 0V
µA
100
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
200
V
GS
= 16V
nA
-200
V
GS
= -16V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
26
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
11
3.8
4.4
11
6.4
73
12
5.1
1060
700
120
Max. Units
Conditions
–––
S
V
DS
= 10V, I
D
= 21A
17
I
D
= 21A
–––
nC V
DS
= 10V
–––
V
GS
= 4.5V
17
V
GS
= 0V, V
DS
= 10V
–––
V
DD
= 10V
–––
I
D
= 21A
ns
–––
R
G
= 1.8Ω
–––
V
GS
= 4.5V
–––
V
GS
= 0V
–––
V
DS
= 10V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
110
21
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.9
0.8
37
28
38
30
54
210
1.3
–––
56
42
57
45
V
ns
nC
ns
nC
A
V
SD
t
rr
Q
rr
t
rr
Q
rr
2
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
T
J
= 25°C, I
S
= 21A, V
GS
= 0V
T
J
= 125°C, I
S
= 21A, V
GS
= 0V
T
J
= 25°C, I
F
= 21A, V
R
=20V
di/dt = 100A/µs
T
J
= 125°C, I
F
= 21A, V
R
=20V
di/dt = 100A/µs
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IRLR/U3715PbF
1000
VGS
15V
10V
4.5V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
TOP
1000
I
D
, Drain-to-Source Current (A)
100
10
2.5V
1
I
D
, Drain-to-Source Current (A)
100
VGS
15V
10V
4.5V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
TOP
10
2.5V
0.1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 52A
I
D
, Drain-to-Source Current (A)
2.0
T
J
= 25
°
C
1.5
100
T
J
= 175
°
C
1.0
0.5
10
2.0
V DS = 15V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
8.0
V
GS
, Gate-to-Source Voltage (V)
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRLR/U3715PbF
10000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
14
I
D
= 21A
V
GS
, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
V
DS
= 16V
V
DS
= 10V
C, Capacitance(pF)
1000
Ciss
Coss
100
Crss
10
1
10
100
FOR TEST CIRCUIT
SEE FIGURE 13
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T
J
= 175
°
C
ID, Drain-to-Source Current (A)
100
100µsec
10
1
T
J
= 25
°
C
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
1msec
10msec
0.1
0.0
V
GS
= 0 V
0.4
0.8
1.2
1.6
2.0
2.4
1
V
SD
,Source-to-Drain Voltage (V)
100
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRLR/U3715PbF
60
LIMITED BY PACKAGE
50
V
DS
V
GS
R
G
R
D
D.U.T.
+
I
D
, Drain Current (A)
40
-
V
DD
4.5V
30
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
20
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.1
0.02
0.01
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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