PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE688M03
FEATURES
•
NEW M03 PACKAGE:
• Smallest transistor outline package available
• Low profile/0.59 mm package height
• Flat lead style for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 9.5 GHz
LOW NOISE FIGURE:
NF = 1.7 dB at 2 GHz
HIGH COLLECTOR CURRENT:
I
CMAX
= 100 mA
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M03
1.2±0.05
0.8±0.1
2
1.4 ±0.1
0.45
(0.9)
0.45
1
0.2±0.1
•
•
•
TS
0.3±0.1
3
DESCRIPTION
The NE688M03 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/flat lead style "M03" package
is ideal for today's portable wireless applications. The NE688
is also available in chip and six different low cost plastic surface
mount package styles.
0.59±0.05
+0.1
0.15 -0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
EIAJ
1
REGISTERED
SYMBOLS
f
T
NF
|S
21E
|
2
h
FE2
I
CBO
I
EBO
C
RE3
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
PART NUMBER
NUMBER
PACKAGE OUTLINE
UNITS
GHz
GHz
dB
dB
dB
dB
µA
µA
pF
0.7
3
80
MIN
4
NE688M03
2SC5437
M03
TYP
5
9.5
1.9
1.7
4
8
145
0.1
0.1
0.8
2.5
MAX
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Noise Figure at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Forward Current Gain at V
CE
= 1 V, I
C
= 3 mA
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Feedback Capacitance at V
CB
= 1 V, I
E
= 0, f = 1 MHz
California Eastern Laboratories
NE688M03
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°C
°C
RATINGS
9
6
2
100
125
150
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
200
µA
25
200
V
CE
= 1 V
D.C. CURRENT GAIN
vs. COLECTOR CURRENT
Collector Current, I
C
(mA)
180
µA
160
µA
20
140
µA
120
µA
15
DC Current Gain, h
FE
7
100
µA
80
µA
60
µA
100
10
5
40
µA
I
B
= 20
µA
0
0
2.5
5
0
0.1 0.2
0.5
1
2
5
10
20
50
100
Collector to Emmiter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
50
V
CE
= 1 V
Collector Current, I
C
(mA)
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0
0.5
1
Base to Emmiter Voltage, V
BE
(V)
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected
to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify
CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR
NEC
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
• Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
06/10/2002
京公网安备 11010802033920号
EEWORLD
