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SBL20U150

Description
Low VF Trench Barrier Schottky Rectifier
CategoryDiscrete semiconductor    diode   
File Size226KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric View All

SBL20U150 Overview

Low VF Trench Barrier Schottky Rectifier

SBL20U150 Parametric

Parameter NameAttribute value
MakerSECOS
package instructionR-PSFM-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY, LOW POWER LOSS
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage150 V
Maximum reverse current100 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
SBL20U150
Elektronische Bauelemente
Voltage 150V 20.0 Amp
Low VF Trench Barrier Schottky Rectifier
RoHS Compliant Product
A suffix of “-C” specifies halogen free
TO-220
FEATURES
Trench
Barrier
Schottky technology
Low forward voltage drop, low power losses.
High current capability
High reliability
High surge current capability
Epitaxial construction
B
N
D
E
M
P
H
J
K
L
Millimeter
Min.
Max.
14.22
16.51
9.65
10.67
12.50
14.75
3.56
4.90
0.51
1.45
2.03
2.92
0.31
0.76
3.5
4.5
A
O
MECHANICAL DATA
C
G
F
REF.
J
K
L
M
N
O
P
Millimeter
Min.
Max.
0.7
1.78
0.38
1.02
2.39
2.69
2.50
3.43
3.10
4.09
8.38
9.65
0.89
1.45
Case: Molded plastic
Epoxy: UL94V-0 rate flame retardant
Lead: Lead solderable per MIL-STD-202
method 208 guaranteed
Polarity: As Marked
Mounting position: Any
Weight: 1.98 g (Approximate)
L
REF.
A
B
C
D
E
F
G
H



MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Maximum Recurrent Peak Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current
Voltage Rate of Chance (Rated V
R
)
Typical Thermal Resistance
Operating and Storage Temperature Range
(Per Leg)
(Per Device)
Symbol
V
RRM
V
RSM
V
DC
I
F
I
FSM
dv/dt
R
JC
T
J
,T
STG
Rating
150
150
150
10
20
150
10000
2
-40~150
Unit
V
V
V
A
A
V /
μs
°C /W
°C
Peak Forward Surge Current, 8.3 ms single half sine-wave
ELECTRICAL CHARACTERISTICS
Parameter
Maximum Instantaneous Forward
Voltage
Maximum DC Reverse Current
at Rated DC Blocking Voltage
2
Typical Junction Capacitance
1
Symbol
V
F
Typ.
0.69
0.75
0.85
0.7
-
-
240
Max.
0.73
0.80
0.95
-
0.1
10
-
Unit
V
Test Condition
I
F
= 3A, T
J
= 25°C
I
F
= 5A, T
J
= 25°C
I
F
= 10 A, T
J
= 25°C
I
F
= 10 A, T
J
= 125°C
T
J
=25°C
T
J
=125°C
I
R
C
J
mA
pF
NOTES:
1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.
2. Pulse Test:Pulse Width = 300
μs,
Duty Cycle
2.0%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
06-Nov-2013 Rev. B
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