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KMM332F404BZ-L5

Description
EDO DRAM Module, 4MX32, 50ns, CMOS, SODIMM-72
Categorystorage    storage   
File Size393KB,21 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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KMM332F404BZ-L5 Overview

EDO DRAM Module, 4MX32, 50ns, CMOS, SODIMM-72

KMM332F404BZ-L5 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeDMA
package instructionDIMM, DIMM72
Contacts72
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time50 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-XDMA-N72
memory density134217728 bit
Memory IC TypeEDO DRAM MODULE
memory width32
Number of functions1
Number of ports1
Number of terminals72
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX32
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM72
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
self refreshYES
Maximum standby current0.001 A
Maximum slew rate0.24 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL

KMM332F404BZ-L5 Preview

DRAM MODULE
KMM332F404BS/BZ-L
4Mx32 SODIMM
(4Mx16 base)
Revision 0.0
Sept. 1997
DRAM MODULE
Revision History
Version 0.0 (Sept, 1997)
KMM332F404BS/BZ-L
• Removed two AC parameters t
CACP
(access time from CAS) and t
AAP
(access time from col. addr.) in
AC CHARACTERISTICS.
• Changed the parameter t
CAC
(access time from CAS) from 13ns to 15ns @ -5 in
AC CHARACTERISTICS.
DRAM MODULE
KMM332F404BS/BZ-L
KMM332F404BS/BZ-L EDO Mode
4M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh
GENERAL DESCRIPTION
The Samsung KMM332F404B is a 8Mx32bits Dynamic RAM
high density memory module. The Samsung KMM332F404B
consists of two CMOS 4Mx16bits DRAMs in TSOPII pack-
ages mounted on a 72-pin zigzag glass-epoxy substrate. A
0.1 or 0.22uF decoupling capacitor is mounted on the printed
circuit board for each DRAM. The KMM332F404B is a Small
Out-line Dual In-line Memory Module with edge connections
and is intended for mounting into 72-pin dual readout zigzag
edge connector sockets.
FEATURES
• Part Identification
- KMM332F404BS-L5/L6
(4096 cycles/128ms Ref, TSOP, Gold, Low Power, 50/60ns)
- KMM332F404BZ-L5/L6
(4096 cycles/128ms Ref, TSOP, Solder, Low Power, 50/60ns)
• Extended Data Out Mode Operation
• CAS-before-RAS Refresh capability
• RAS-only and Hidden refresh capability
• TTL compatible inputs and outputs
• Single +3.3V
±0.3V
power supply
• JEDEC standard PDPin & pinout (72pin)
• PCB : Height(1000mil), single sided component
PERFORMANCE RANGE
Speed
-5
-6
t
RAC
50ns
60ns
t
CAC
15ns
15ns
t
RC
90ns
110ns
t
HPC
25ns
30ns
PIN CONFIGURATIONS
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Symbol
V
SS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
V
CC
PD1
A0
A1
A2
A3
A4
A5
A6
A10
NC
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
A7
A11
V
CC
A8
A9
NC
RAS2
DQ16
NC
Pin
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Symbol
DQ18
DQ19
V
SS
CAS0
CAS2
CAS3
CAS1
RAS0
NC
NC
W
NC
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
NC
DQ27
DQ28
DQ29
DQ30
DQ31
V
CC
DQ32
DQ33
DQ34
NC
PD2
PD3
PD4
PD5
PD6
PD7
V
SS
PIN NAMES
Pin Name
A0 - A11
DQ(0 -7,9-16,
18-25,27-34)
W
RAS0, RAS2
CAS0 - CAS3
PD1 -PD7
V
CC
V
SS
NC
Function
Address Inputs
Data In/Out
Read/Write Enable
Row Address Storbe
Column Address Strobe
Presence Detect
Power(+3.3V)
Ground
No Connection
PRESENCE DETECT PINS (Optional)
Pin
PD1
PD2
PD3
PD4
PD5
PD6
PD7
50NS
NC
NC
V
SS
NC
V
SS
V
SS
V
SS
60NS
NC
NC
V
SS
NC
NC
NC
V
SS
DRAM MODULE
FUNCTIONAL BLOCK DIAGRAM
KMM332F404BS/BZ-L
RAS0
CAS0
CAS1
RAS
LCAS
UCAS
U0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
OE
RAS2
CAS2
CAS3
RAS
LCAS
UCAS
U1
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ27
DQ28
DQ29
DQ30
DQ31
DQ32
DQ33
DQ34
OE
W
A0-A11
V
CC
.1uF or .22uF Capacitor
for each DRAM
V
SS
To all DRAMs
DRAM MODULE
ABSOLUTE MAXIMUM RATINGS *
Item
Voltage on any pin relative V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
D
I
OS
KMM332F404BS/BZ-L
Rating
-0.5 to +4.6
-0.5 to +4.6
-55 to +150
2
50
Unit
V
V
°C
W
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for in
tended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to
Item
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.0
-0.3
*2
V
SS
, T
A
= 0 to 70°C)
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.3
*1
0.8
Unit
V
V
V
V
*1 : V
CC
+1.3V at pulse width
≤15ns,
which is measured at V
CC
.
*2 : -1.3V at pulse width
≤15ns,
which is measured at V
SS
.
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
Symbol
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
CC7
I
CCS
I
I(L)
I
O(L)
V
OH
V
OL
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
CC7
Speed
-L5
-L6
Don′t care
-L5
-L6
-L5
-L6
Don′t care
-L5
-L6
Don′t care
Don′t care
Don′t care
Don′t care
KMM332F404BS
Min
-
-
-
-
-
-
-
-
-
-
-
-
-10
-5
2.4
-
Max
240
220
4
240
220
220
200
1.0
240
220
0.8
0.8
10
5
-
0.4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
: Operating Current * ( RAS, CAS, Address cycling @
t
RC
=min)
: Standby Current ( RAS=CAS=W=V
IH
)
: RAS Only Refresh Current * ( CAS=V
IH
, RAS cycling @
t
RC
=min)
: Extended Data Out Mode Current * ( RAS=V
IL
, CAS cycling :
t
HPC
=min)
: Standby Current ( RAS=CAS=W=V
CC
-0.2V)
: CAS-Before-RAS Refresh Current * ( RAS and CAS cycling @
t
RC
=min)
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, CAS=0.2V)
DQ0-31=Don
′t
care,
t
RC
=31.25us,
t
RAS
=
t
RAS
min~300ns
Iccs : Self Refresh Current ( RAS=CAS=V
IL
, W=OE=A0-A11=V
CC
-0.2V or 0.2V, DQ0-DQ34=V
I(
IL)
: Input Leakage Current (Any input 0
≤V
IN
≤V
CC
+0.3V, all other pins not under test=0V)
I(
OL)
: Output Leakage Current(Data Out is disabled, 0V
≤V
OUT
≤V
CC
)
V
OH
: Output High Voltage Level (I
OH
= -2mA)
V
OL
: Output Low Voltage Level (I
OL
= 2mA)
CC
-0.2V,0.2V
or OPEN
* NOTE : I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time,
t
HPC
.

KMM332F404BZ-L5 Related Products

KMM332F404BZ-L5 KMM332F404BS-L5 KMM332F404BS-L6 KMM332F404BZ-L6
Description EDO DRAM Module, 4MX32, 50ns, CMOS, SODIMM-72 EDO DRAM Module, 4MX32, 50ns, CMOS, SODIMM-72 EDO DRAM Module, 4MX32, 60ns, CMOS, SODIMM-72 EDO DRAM Module, 4MX32, 60ns, CMOS, SODIMM-72
Maker SAMSUNG SAMSUNG SAMSUNG SAMSUNG
Parts packaging code DMA DMA DMA DMA
package instruction DIMM, DIMM72 DIMM, DIMM72 DIMM, DIMM72 DIMM, DIMM72
Contacts 72 72 72 72
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
access mode FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO
Maximum access time 50 ns 50 ns 60 ns 60 ns
Other features RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type COMMON COMMON COMMON COMMON
JESD-30 code R-XDMA-N72 R-XDMA-N72 R-XDMA-N72 R-XDMA-N72
memory density 134217728 bit 134217728 bit 134217728 bit 134217728 bit
Memory IC Type EDO DRAM MODULE EDO DRAM MODULE EDO DRAM MODULE EDO DRAM MODULE
memory width 32 32 32 32
Number of functions 1 1 1 1
Number of ports 1 1 1 1
Number of terminals 72 72 72 72
word count 4194304 words 4194304 words 4194304 words 4194304 words
character code 4000000 4000000 4000000 4000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C
organize 4MX32 4MX32 4MX32 4MX32
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM DIMM
Encapsulate equivalent code DIMM72 DIMM72 DIMM72 DIMM72
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 3.3 V 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 4096 4096 4096 4096
self refresh YES YES YES YES
Maximum standby current 0.001 A 0.001 A 0.001 A 0.001 A
Maximum slew rate 0.24 mA 0.24 mA 0.22 mA 0.22 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V
surface mount NO NO NO NO
technology CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL
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