HYM71V16M655AT6-P datasheet, PDF

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HYM71V16M655AT6-P: DescriptionSynchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144; Categorystorage storage; File Size241KB，14 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/; Environmental Compliance

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HYM71V16M655AT6-P Overview

Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144

HYM71V16M655AT6-P Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SK Hynix
Parts packaging code	MODULE
package instruction	DIMM, DIMM144,32
Contacts	144
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N144
JESD-609 code	e4
memory density	1073741824 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	144
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM144,32
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
self refresh	YES
Maximum standby current	0.016 A
Maximum slew rate	1.6 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Gold (Au)
Terminal form	NO LEAD
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	20

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16Mx64 bits

PC100 SDRAM SO DIMM

based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh

HYM71V16M655A(L)T6 Series

DESCRIPTION

The Hynix HYM71V16M655AT6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 8Mx16bits

CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy

printed circuit board. Two 0.33uF and one 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.

The Hynix HYM71V16M655AT6 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 128Mbytes

memory. The Hynix HYM71V16M655AT6 Series are fully synchronous operation referenced to the positive edge of the clock . All

inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high

bandwidth.

FEATURES

•

PC100MHz support

144pin SDRAM SO DIMM

Serial Presence Detect with EEPROM

1.25” (31.75mm) Height PCB with double sided com-

ponents

Single 3.3±0.3V power supply

- 1, 2, 4 or 8 or Full page for Sequential Burst

•

All device pins are compatible with LVTTL interface

- 1, 2, 4 or 8 for Interleave Burst

Data mask function by DQM

•

Programmable CAS Latency ; 2, 3 Clocks

•

SDRAM internal banks : four banks

Module bank : two physical bank

Auto refresh and self refresh

4096 refresh cycles / 64ms

Programmable Burst Length and Burst Type

ORDERING INFORMATION

Part No.

HYM71V16M655AT6-8

HYM71V16M655AT6-P

HYM71V16M655AT6-S

HYM71V16M655ALT6-8

HYM71V16M655ALT6-P

HYM71V16M655ALT6-S

Clock

Frequency

125MHz

100MHz

125MHz

100MHz

Internal

Bank

Ref.

Power

SDRAM

Package

Plating

Normal

4 Banks

Low Power

TSOP-II

Gold

This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for

use of circuits described. No patent licenses are implied.

Rev. 1.4/Dec.

HYM71V16M655AT6-P Related Products

	HYM71V16M655AT6-P	HYM71V16M655AT6-S	HYM71V16M655ALT6-8	HYM71V16M655ALT6-P	HYM71V16M655ALT6-S
Description	Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144	Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144
Maker	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix
Parts packaging code	MODULE	MODULE	MODULE	MODULE	MODULE
package instruction	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32
Contacts	144	144	144	144	144
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
Maximum access time	6 ns	6 ns	6 ns	6 ns	6 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz	100 MHz	125 MHz	100 MHz	100 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144
memory density	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	64	64	64	64	64
Number of functions	1	1	1	1	1
Number of ports	1	1	1	1	1
Number of terminals	144	144	144	144	144
word count	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000	16000000	16000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C
organize	16MX64	16MX64	16MX64	16MX64	16MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096	4096
self refresh	YES	YES	YES	YES	YES
Maximum standby current	0.016 A	0.016 A	0.016 A	0.016 A	0.016 A
Maximum slew rate	1.6 mA	1.6 mA	1.6 mA	1.6 mA	1.6 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Is it lead-free?	Lead free	Contains lead	-	Lead free	Contains lead
Is it Rohs certified?	conform to	incompatible	-	conform to	incompatible
JESD-609 code	e4	e4	-	e4	e4
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	-	260	NOT SPECIFIED
Terminal surface	Gold (Au)	Gold (Au)	-	Gold (Au)	Gold (Au)
Maximum time at peak reflow temperature	20	NOT SPECIFIED	-	20	NOT SPECIFIED

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