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ZXM62N03E6

Description
Small Signal Field-Effect Transistor, 2.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size45KB,1 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric View All

ZXM62N03E6 Overview

Small Signal Field-Effect Transistor, 2.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN

ZXM62N03E6 Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)2.2 A
Maximum drain-source on-resistance0.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
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