OneNAND1Gb(KFG1G16U2B-DIB6)
FLASH MEMORY
KFG1G16U2B
1Gb OneNAND B-die
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
OneNAND™‚
is a trademark of Samsung Electronics Company, Ltd. Other names and brands may be claimed as
the property of their rightful owners.
* Samsung Electronics reserves the right to change products or specification without notice.
1
OneNAND1Gb(KFG1G16U2B-DIB6)
FLASH MEMORY
Revision History
Document Title
OneNAND
Revision History
Revision No. History
0.0
1.0
1. Initial issue.
1. Corrected errata
2. Deleted 83Mhz synchronous Burst Read operation, Cache Read opera-
tion, Synchronous Burst Block Read operation, Sync Burst Write opera-
tion.
3. Chapter 2.8.19 Burst read revised
4. Chapter 2.8.21 Controller Status Register Output Modes revised
5. Chapter 2.8.22 WI Interrupt revised
6. Chapter 2.8.23 Added SBA description table
7. Chapter 3.1 Command Based Operation revised
8. Chapter 3.1.1 and 3.1.2 revised
9. Chapter 3.3 Reset Mode revised
10. Chapter 3.3.1, 4.2, 6.11 : Corrected Boot copy requirement.
11. Chapter 3.4 Data protection and all block unlock flow chart updated
12. Chapter 3.5 Data Protection During Power Down Operation revised
13. Chapter 3.8 Program operation flow diagram updated
14. Chapter 3.9.1 Copy-Back Program Operation with Random Data 7
Input flow chart updated
15. Chapter 3.10.1 Block Erase Operation flow chart updated
16. Chapter 3.10.2 Locked Blocks case3 corrected
17. Chapter 3.10.3 Multi Block Erase/Verify read flow chart updated
18. Chapter 3.11 OTP Operation revised
19. Chapter 5.3 Valid Block Characteristics note revised
20. Chapter 5.8 AC Characteristics table revised
21. Chapter 6.15 Data Protection Timing During Power Down revised
22. Chapter 7.1.2 Polling the Interrupt Register Status Bit revised
Draft Date
Sep. 18, 2006
Jul. 20, 2007
Remark
Advanced
Final
1.1
1. Chapter 4.3 DC Characteristics revised.
2. Chapter 5.8 AC Characteristics for Load/Program/Erase Performance
revised.
Aug. 27, 2007
Final
1.2
1. Chapter 5.8 AC Characteristics for Load/Program/Erase Performance
revised.
Sep. 06, 2007
Final
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OneNAND1Gb(KFG1G16U2B-DIB6)
FLASH MEMORY
1.0
INTRODUCTION
This specification contains information about the Samsung Electronics Company OneNAND
™
‚ Flash memory product family. Section
1.0 includes a general overview, revision history, and product ordering information.
Section 2.0 describes the OneNAND device. Section 3.0 provides information about device operation. Electrical specifications and
timing waveforms are in Sections 4.0 though 6.0. Section 7.0 provides additional application and technical notes pertaining to use of
the OneNAND. Package dimensions are found in Section 8.0
Density
1Gb
Part No.
KFG1G16U2B-DIB6
V
CC
(core & IO)
3.3V(2.7V~3.6V)
Temperature
Industrial
PKG
63FBGA(LF)
1.1
Flash Product Type Selector
Samsung offers a variety of Flash solutions including NAND Flash, OneNAND
™
and NOR Flash. Samsung offers Flash products
both component and a variety of card formats including RS-MMC, MMC, CompactFlash, and SmartMedia.
To determine which Samsung Flash product solution is best for your application, refer the product selector chart.
Application Requires
Fast Random Read
Fast Sequential Read
Fast Write/Program
Multi Block Erase
Erase Suspend/Resume
Copyback
Lock/Unlock/Lock-Tight
ECC
Scalability
Samsung Flash Products
NAND
•
•
OneNAND
™
•
•
•
(Max 64 Blocks)
•
•
(EDC)
External (Hardware/Software)
•
•
(ECC)
•
Internal
•
•
X
•
•
NOR
•
3
OneNAND1Gb(KFG1G16U2B-DIB6)
FLASH MEMORY
6
Speed
6 : 66MHz
Product Line desinator
B : Include Bad Block
D : Daisy Sample
Operating Temperature Range
I = Industrial Temp. (-40
°C
to 85
°C)
Package
D : FBGA(Lead Free)
Version
3rd Generation
Page Architecture
2 : 2KB Page
1.2
Ordering Information
K F G 1G 16 U 2 B - D I x
Samsung
OneNAND Memory
Device Type
G : Single Chip
Density
1G : 1Gb
Organization
x16 Organization
Operating Voltage Range
U : 3.3V(2.7 V to 3.6V)
1.3
Architectural Benefits
OneNAND is a highly integrated non-volatile memory solution based around a NAND Flash memory array.
The chip integrates system features including:
•
A BootRAM and bootloader
•
Two independent bi-directional 2KB DataRAM buffers
•
A High-Speed x16 Host Interface
•
On-chip Error Correction
•
On-chip NOR interface controller
This on-chip integration enables system designers to reduce external system logic and use high-density NAND Flash in applications
that would otherwise have to use more NOR components.
OneNAND takes advantage of the higher performance NAND program time, low power, and high density and combines it with the
synchronous read performance of NOR. The NOR Flash host interface makes OneNAND an ideal solution for applications like G3
Smart Phones, Camera Phones, and mobile applications that have large, advanced multimedia applications and operating systems,
but lack a NAND controller.
When integrated into a Samsung Multi-Chip-Package with Samsung Mobile DDR SDRAM, designers can complete a high-perfor-
mance, small footprint solution.
4
OneNAND1Gb(KFG1G16U2B-DIB6)
FLASH MEMORY
1.4
Product Features
B die
3.3V (2.7V ~ 3.6V)
16 bit
1KB BootRAM, 4KB DataRAM
(2K+64)B Page Size, (128K+4K)B Block Size
Device Architecture
•
Design Technology:
•
Supply Voltage:
•
Host Interface:
•
5KB Internal BufferRAM:
•
SLC NAND Array:
Device Performance
•
Host Interface Type:
•
Programmable Burst Read Latency:
•
•
•
•
Multiple Sector Read/Write:
Multiple Reset Modes:
Multi Block Erase:
Low Power Dissipation:
Synchronous Burst Read
- Up to 66MHz clock frequency
- Linear Burst 4-, 8-, 16-, 32-words with wrap around
- Continuous 1K words Sequential Burst
Asynchronous Random Read
- 76ns access time
Asynchronous Random Write
Latency 3,4(Default),5,6 and 7.
1~40MHz : Latency 3 available
1~66MHz : Latency 4,5,6 and 7 available
Up to 4 sectors using Sector Count Register
Cold/Warm/Hot/NAND Flash Core Reset
up to 64 Blocks
Typical Power,
- Standby current : 10uA
- Synchronous Burst Read current(66Mhz) : 25mA
- Load current : 30mA
- Program current : 28mA
- Erase current : 23mA
- Multi Block Erase current : 23mA
•
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
System Hardware
•
Voltage detector generating internal reset signal from Vcc
•
Hardware reset input (RP)
- Write Protection for BootRAM
•
Data Protection Modes
- Write Protection for NAND Flash Array
- Write Protection during power-up
- Write Protection during power-down
- 1st block OTP
•
User-controlled One Time Programmable(OTP) area
•
Internal 2bit EDC / 1bit ECC
•
Internal Bootloader supports Booting Solution in system
- INT pin indicates Ready / Busy
•
Handshaking Feature
- Polling the interrupt register status bit
- by ID register
•
Detailed chip information
Packaging
•
1Gb products
63ball, 10mm x 13mm x max 1.0mmt , 0.8mm ball pitch FBGA
5
51mcu
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