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TSS43LRW

Description
Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size181KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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TSS43LRW Overview

Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon,

TSS43LRW Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionR-PBCC-N2
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PBCC-N2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formCHIP CARRIER
Maximum power dissipation0.2 W
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationBOTTOM

TSS43LRW Preview

TSS42L/TSS43L
0.2Amp Surface Mount Schottky
Barrier Diode
Small Signal Product
Features
Designed for mounting on small surface
Extremely thin/leadless package
Low capacitance
Low forward voltage drop
High temperature soldering :
260
o
C/10 seconds at terminals
Chip version in 1005
1005
Mechanical Data
Case : 1005 Standard package, molded plastic
Terminals : Gold plated, solderable per
MIL-STD-750, method 2026
Polarity : Indicated by cathode band
Mounting position : Any
Package code : RW
Weight : 0.006 grams (approximately)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
RMS Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current
Peak Forward Surge Current 8.3ms Single Half
Sine-Wave Superimposed on Rate Load (JEDEC Method)
Power Dissipation
Forward Voltage
TSS42L/43L
TSS42L
TSS42L
TSS43L
Reverse Leakage Current
TSS43L
V
R
= 25 V
I
F
= 200 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 2 mA
I
F
= 15 mA
Symbol
V
RRM
V
R
V
R(RMS)
I
O
I
FRM
I
FSM
Pd
TSS42L/TSS43L
30
30
21
200
0.5
400
200
1.0
0.4
Units
V
V
V
mA
A
mA
mW
V
F
0.65
0.33
0.45
V
I
R
C
J
Trr
T
J
T
STG
0.5
10
5
-55 to + 125
-55 to + 125
μA
pF
nS
o
o
Typical Capacitance Between Terminals
( V
R
=1V, f=1.0MHz Reverse Voltage)
Reverse Recovery Time
( I
F
=I
R
=10mA, Irr=0.1×I
R
, R
L
=100Ω)
Junction Temperature
Storage Temperature
C
C
Version:B14
Small Signal Product
RATINGS AND CHARACTERISTIC CURVE ( TSS42L / TSS43L )
Fig.1 Forward Characteristics
1000
125
o
C
1000
Fig. 2 Reverse Characteristics
125
o
C
100
Reverse Current (uA)
10
1
0.1
0.01
0.001
25
o
C
75
o
C
Forward current (mA)
100
75
o
C
10
25
o
C
1
-25
o
C
0.1
0
0.2
0.4
0.6
0.8
0
10
20
Reverse Voltage (V)
30
40
Forward Voltage (V)
Fig. 3 Capacitance Between Terminals Characteristics
16
Capacitance Between Terminals (pF)
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
35
f=1MHz
T
A
=25
o
C
120
Average Forward Current (mA)
100
80
60
40
20
0
0
25
Fig. 4 Current Derating Curve
50
75
100
125
150
Reverse Voltage (V)
Ambient Temperature (
o
C)
Version:B14
Small Signal Product
Ordering information (Detail, example)
Part No.
TSS4xL
(Note 1)
TSS42L
Package
1005
1005
Packing
4K / 7" Reel
4K / 7" Reel
Packing code
RW
RW
Packing code
(Green)
RWG
RWG
Manufacture code
(Note 2)
Note 1 : "x" is Device Code "2" thru "3".
Note 2 : Manufacture special control, if empty means no special control requirement.
Dimensions
DIM.
L
W
T
C
D
Unit(mm)
Min
2.40
1.10
0.70
-
-
Typ.
-
-
-
0.50
1.00
Max
2.60
1.30
0.90
-
-
Min
0.094
0.043
0.028
-
-
Unit(inch)
Typ.
-
-
-
0.020
0.039
Max
0.102
0.051
0.035
-
-
Version:B14

TSS43LRW Related Products

TSS43LRW TSS42LRWG TSS42LRW TSS43LRWG
Description Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon,
Maker Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
package instruction R-PBCC-N2 R-PBCC-N2 R-PBCC-N2 R-PBCC-N2
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PBCC-N2 R-PBCC-N2 R-PBCC-N2 R-PBCC-N2
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
Maximum output current 0.2 A 0.2 A 0.2 A 0.2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER
Maximum power dissipation 0.2 W 0.2 W 0.2 W 0.2 W
Maximum repetitive peak reverse voltage 30 V 30 V 30 V 30 V
Maximum reverse recovery time 0.005 µs 0.005 µs 0.005 µs 0.005 µs
surface mount YES YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
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