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UF1KR0G

Description
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size428KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

UF1KR0G Overview

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN

UF1KR0G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionDO-41, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-204AL
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time0.075 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
creat by art
UF1A - UF1M
1.0 AMP. Glass Passivated High Efficient Rectifiers
DO-41/DO-204AL
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V0
ldally suited for use in very high frequency
switching power supplies, inverters and as free
wheeling diodes
Glass passivated chip junction
Excellent high temperature switching
Ultrafast recovery time for high efficiency
Soft recovery characteristics
High temperature soldering guaranteed:
260
o
C/10 seconds
Green compound with suffix "G" on packing
code & prefix "G" on datecode.
Mechanical Data
Case: JEDEC DO-204AL molded plastic body over
passivated chip
Terminals: Pure tin plate, lead free, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode
Weight: 0.34 grams
Ordering Information (example)
Part No.
UF1A
Package
DO-41
Packing
3K / AMMO box
INNER
TAPE
52mm
Packing code
A0
Packing code
(Green)
A0G
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@1A
Maximum DC Reverse Current at
Rated DC Blocking Voltage
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating/Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
@ T
A
=25
@ T
A
=125
Symbol UF1A UF1B
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
R
θJL
T
J,
T
STG
50
35
50
100
70
100
UF1D UF1G
200
140
200
400
280
400
1
30
UF1J
600
420
600
UF1K UF1M
800
560
800
1000
700
1000
Units
V
V
V
A
A
1.0
5
150
50
17
60
15
- 55 to + 150
1.7
V
uA
uA
Maximum Reverse Recovery Time (Note 2)
75
nS
pF
O
C/W
O
C
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
Version:E13
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