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BYX102GAMO

Description
0.36A, 10000V, SILICON, SIGNAL DIODE, HERMETIC SEALED, COMPACT, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size77KB,10 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BYX102GAMO Overview

0.36A, 10000V, SILICON, SIGNAL DIODE, HERMETIC SEALED, COMPACT, GLASS PACKAGE-2

BYX102GAMO Parametric

Parameter NameAttribute value
MakerNXP
package instructionE-LALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeE-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current0.36 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Certification statusNot Qualified
GuidelineIEC-134
Maximum repetitive peak reverse voltage10000 V
Maximum reverse recovery time0.35 µs
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D354
BYX101G; BYX102G; BYX103G;
BYX104G
High-voltage soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 Oct 03
2000 Jan 13
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