VISHAY
BAR64V-06
Vishay Semiconductors
RF PIN Diodes - Dual, Common Anode in SOT-23
Description
Characterized by low reverse Capacitance the PIN
Diodes BAR64V-06 was designed for RF signal
switching and tuning. As a function of the forward
bias current the forward resistance (rf) can be
adjusted over a wide range. A long carrier life time
offers low signal distortion for signals over 10 MHz up
to 3 GHz. Typical applications for this PIN Diodes are
switches and attenuators in wireless, mobile and TV-
systems.
2
1
1
2
3
3
17033
Features
• High reverse Voltage
• Small reverse capacitance
• High breakdown voltage
Mechanical Data
Case:
SOT-23 Plastic case
Weight:
approx. 8.1 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Applications
For frequency up to 3 GHz
RF-signal tuning
Signal attenuator and switches
Mobile, wireless and TV-Applications
Parts Table
Part
BAR64V-06
Ordering code
BAR64V-06-GS18 or BAR64V-06-GS08
D6
Marking
Remarks
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Test condition
Symbol
V
R
I
F
T
j
T
stg
Value
100
100
150
- 55 to + 150
Unit
V
mA
°C
°C
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Reverse current
Forward voltage
Test condition
I
R
= 10
µA
V
R
= 50 V
I
F
= 50 mA
Symbol
V
R
I
R
V
F
Min
100
50
1.1
Typ.
Max
Unit
V
nA
V
Document Number 85696
Rev. 1.3, 08-Jul-04
www.vishay.com
1
BAR64V-06
Vishay Semiconductors
Parameter
Diode capacitance
Test condition
f = 1 MHz, V
R
= 0
f = 1 MHz, V
R
= 1 V
f = 1 MHz, V
R
= 20 V
Forward resistance
f = 100 MHz, I
F
= 1 mA
f = 100 MHz, I
F
= 10 mA
f = 100 MHz, I
F
= 100 mA
Charge carrier life time
I
F
= 10 mA, I
R
= 6 mA, i
R
= 3 mA
Symbol
C
D
C
D
C
D
r
f
r
f
r
f
t
rr
Min
Typ.
0.5
0.37
0.23
10
2.0
0.8
1.8
0.5
0.35
20
3.8
1.35
Max
VISHAY
Unit
pF
pF
pF
Ω
Ω
Ω
µs
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
100.00
100.0
r
f
- Forward Resistance (
Ω
)
I
F
- Forward Current ( mA )
f = 100 MHz
10.0
10.00
1.00
1.0
0.10
0.1
0.1
18342
1.0
10
100
0.01
0.5
18326
0.6
0.7
0.8
0.9
1.0
I
F
- Forward Current ( mA )
V
F
- Forward Voltage ( V )
Figure 1. Forward Resistance vs. Forward Current
Figure 3. Forward Current vs. Forward Voltage
0.50
C
D
- Diode Capacitance ( pF )
300
f = 1 MHz
V
R
- Reverse V oltage ( V )
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
4
8
250
200
150
100
50
0
0.01
12
16
20
24
28
18330
0.1
1.0
10
100
1000
18334
V
R
- Reverse V oltage (V)
I
R
- Reverse Current (
µA
)
Figure 2. Diode Capacitance vs. Reverse Voltage
Figure 4. Reverse Voltage vs. Reverse Current
www.vishay.com
2
Document Number 85696
Rev. 1.3, 08-Jul-04
VISHAY
BAR64V-06
Vishay Semiconductors
12
10
I
F
- Forward Current ( mA )
8
6
4
2
0
-2
-4
-6
-8
-500
500
I
F
= 10 mA
I
R
= 6 mA
i
rr
= 3 mA
1500
2500
3500
18338
Recovery Time ( ns )
Figure 5. Typical Charge Recovery Curve
Package Dimensions in mm (Inches)
1.15 (.045)
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
0.4 (.016)
0.4 (.016)
2.6 (.102)
2.35 (.092)
0.95 (.037)
ISO Method E
3.1 (.122)
2.8 (.110)
0.4 (.016)
3
1.43 (.056)
1.20(.047)
Mounting Pad Layout
0.52 (0.020)
0.9 (0.035)
2.0 (0.079)
1
0.95 (.037)
2
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
Document Number 85696
Rev. 1.3, 08-Jul-04
www.vishay.com
3
BAR64V-06
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 85696
Rev. 1.3, 08-Jul-04
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