SYS81000FKXL-12 datasheet, PDF

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SYS81000FKXL-12: DescriptionSRAM Module, 1MX8, 120ns, CMOS, PDIP36; Categorystorage storage; File Size258KB，7 Pages; ManufacturerSyntaq Technology Inc

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SYS81000FKXL-12 Overview

SRAM Module, 1MX8, 120ns, CMOS, PDIP36

SYS81000FKXL-12 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Syntaq Technology Inc
package instruction	DIP, DIP36,.6
Reach Compliance Code	unknown
Maximum access time	120 ns
I/O type	COMMON
JESD-30 code	R-PDIP-T36
JESD-609 code	e0
memory density	8388608 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of terminals	36
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP36,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.00018 A
Minimum standby current	2 V
Maximum slew rate	0.103 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

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SYS81000FKXL-12 Related Products

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Description	SRAM Module, 1MX8, 120ns, CMOS, PDIP36	SRAM Module, 1MX8, 85ns, CMOS, PDIP36	SRAM Module, 1MX8, 100ns, CMOS, PDIP36	SRAM Module, 1MX8, 120ns, CMOS, PDIP36	SRAM Module, 1MX8, 70ns, CMOS, PDIP36	SRAM Module, 1MX8, 100ns, CMOS, PDIP36	SRAM Module, 1MX8, 70ns, CMOS, PDIP36	SRAM Module, 1MX8, 85ns, CMOS, PDIP36	SRAM Module, 1MX8, 55ns, CMOS, PDIP36
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Syntaq Technology Inc	Syntaq Technology Inc	Syntaq Technology Inc	Syntaq Technology Inc	Syntaq Technology Inc	Syntaq Technology Inc	Syntaq Technology Inc	Syntaq Technology Inc	Syntaq Technology Inc
package instruction	DIP, DIP36,.6	DIP, DIP36,.6	DIP, DIP36,.6	DIP, DIP36,.6	DIP, DIP36,.6	DIP, DIP36,.6	DIP, DIP36,.6	DIP, DIP36,.6	DIP, DIP36,.6
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	120 ns	85 ns	100 ns	120 ns	70 ns	100 ns	70 ns	85 ns	55 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDIP-T36	R-PDIP-T36	R-PDIP-T36	R-PDIP-T36	R-PDIP-T36	R-PDIP-T36	R-PDIP-T36	R-PDIP-T36	R-PDIP-T36
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	8	8	8	8	8	8	8	8	8
Number of terminals	36	36	36	36	36	36	36	36	36
word count	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000	1000000	1000000	1000000	1000000	1000000	1000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	85 °C	85 °C	85 °C	85 °C	70 °C	70 °C	70 °C	70 °C
organize	1MX8	1MX8	1MX8	1MX8	1MX8	1MX8	1MX8	1MX8	1MX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP36,.6	DIP36,.6	DIP36,.6	DIP36,.6	DIP36,.6	DIP36,.6	DIP36,.6	DIP36,.6	DIP36,.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.00018 A	0.00018 A	0.00018 A	0.00018 A	0.00018 A	0.00018 A	0.00018 A	0.00018 A	0.00018 A
Minimum standby current	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V
Maximum slew rate	0.103 mA	0.103 mA	0.103 mA	0.103 mA	0.103 mA	0.103 mA	0.103 mA	0.103 mA	0.103 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

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