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IXYH30N120C3

Description
High-Speed IGBT for 20-50 kHz Switching
File Size184KB,6 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
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IXYH30N120C3 Overview

High-Speed IGBT for 20-50 kHz Switching

1200V XPT
TM
GenX3
TM
IGBTs
High-Speed IGBT
for 20-50 kHz Switching
IXYP30N120C3
IXYH30N120C3
V
CES
=
I
C110
=
V
CE(sat)

t
fi(typ)
=
1200V
30A
3.3V
88ns
TO-220 (IXYP)
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
I
A
E
AS
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TO-220
TO-247
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C, R
GE
= 1M
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1ms
T
C
= 25°C
T
C
= 25°C
V
GE
= 15V, T
VJ
= 150°C, R
G
= 10
Clamped Inductive Load
T
C
= 25°C
Maximum Ratings
1200
1200
±20
±30
75
30
145
20
400
I
CM
= 60
V
CE
V
CES
500
-55 ... +175
175
-55 ... +175
300
260
1.13/10
3
6
V
V
V
V
A
A
A
A
mJ
A
W
°C
°C
°C
°C
°C
Nm/lb.in
g
g
Features
G
CE
Tab
TO-247 AD (IXYH)
G
C
E
Tab
G = Gate
E = Emitter
C
= Collector
Tab = Collector
High Voltage Package
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Avalanche Rated
International Standard Packages
Advantages
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250A, V
GE
= 0V
= 250A, V
CE
= V
GE
T
J
= 150C
V
CE
= 0V, V
GE
=
20V
I
C
= 30A, V
GE
= 15V, Note 1
T
J
= 150C
Characteristic Values
Min.
Typ.
Max.
1200
3.0
5.0
25
750
100
3.3
3.7
V
V
A
μA
nA
V
V
High Power Density
Low Gate Drive Requirement
Applications
V
CE
= V
CES
, V
GE
= 0V
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
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