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DTC363ELTL2

Description
Small Signal Bipolar Transistor, 0.6A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, FTL, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size83KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Parametric View All

DTC363ELTL2 Overview

Small Signal Bipolar Transistor, 0.6A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, FTL, 3 PIN

DTC363ELTL2 Parametric

Parameter NameAttribute value
MakerROHM Semiconductor
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresDIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)50
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max0.08 V
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