PBLS1502Y; PBLS1502V
15 V PNP BISS loadswitch
Rev. 03 — 24 August 2009
Product data sheet
1. Product profile
1.1 General description
Low V
CEsat
PNP transistor and NPN resistor-equipped transistor in one package.
Table 1.
Product overview
Package
NXP
PBLS1502Y
PBLS1502V
SOT363
SOT666
JEITA
SC-88
-
Type number
1.2 Features
I
I
I
I
I
Low V
CEsat
(BISS) transistor and resistor-equipped transistor in one package
Low ‘threshold’ voltage (< 1 V) compared to MOSFET
Low drive power required
Space-saving solution
Reduction of component count
1.3 Applications
I
I
I
I
Supply line switches
Battery charger switches
High-side switches for LEDs, drivers and backlights
Portable equipment
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
R
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector-current (DC)
equivalent on-resistance
I
C
= −500
mA;
I
B
= −50
mA
open base
Conditions
open base
Min
-
-
-
Typ
-
-
300
Max
−15
−500
500
Unit
V
mA
mΩ
TR1; PNP: low V
CEsat
transistor
TR2; NPN: resistor-equipped transistor
V
CEO
collector-emitter voltage
-
-
50
V
NXP Semiconductors
PBLS1502Y; PBLS1502V
15 V PNP BISS loadswitch
Quick reference data
…continued
Parameter
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
Min
-
3.3
0.8
Typ
-
4.7
1
Max
100
6.1
1.2
Unit
mA
kΩ
Table 2.
Symbol
I
O
R1
R2/R1
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Discrete pinning
Description
emitter TR1
base TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
collector TR1
1
2
3
001aab555
R1
R2
TR2
TR1
Simplified outline
6
5
4
Symbol
6
5
4
1
2
3
sym036
3. Ordering information
Table 4.
Ordering information
Package
Name
PBLS1502Y
PBLS1502V
SC-88
-
Description
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
Version
SOT363
SOT666
Type number
4. Marking
Table 5.
Marking
Marking code
[1]
*C2
C2
Type number
PBLS1502Y
PBLS1502V
[1]
* = -: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PBLS1502Y_PBLS1502V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 24 August 2009
2 of 14
NXP Semiconductors
PBLS1502Y; PBLS1502V
15 V PNP BISS loadswitch
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
V
CBO
V
CEO
V
EBO
V
I
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
total power dissipation
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
I
CM
P
tot
Per device
P
tot
T
stg
T
j
T
amb
[1]
Conditions
open emitter
open base
open collector
t
p
≤
1 ms;
δ ≤
0.02
t
p
≤
1 ms;
δ ≤
0.02
T
amb
≤
25
°C
open emitter
open base
open collector
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
−15
−15
−6
−500
−1
−50
−100
200
50
50
10
+30
−10
100
100
200
300
+150
150
+150
Unit
V
V
V
mA
A
mA
mA
mW
V
V
V
V
V
mA
mA
mW
mW
°C
°C
°C
Transistor TR1: PNP
Transistor TR2: NPN
output current (DC)
peak collector current
total power dissipation
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C
[1]
-
-
−65
-
−65
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
6. Thermal characteristics
Table 7.
Symbol
Per device
R
th(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
[1]
[2]
Thermal characteristics
Parameter
Conditions
in free air
[1]
[1][2]
Min
Typ
Max
Unit
-
-
-
-
416
416
K/W
K/W
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
PBLS1502Y_PBLS1502V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 24 August 2009
3 of 14
NXP Semiconductors
PBLS1502Y; PBLS1502V
15 V PNP BISS loadswitch
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol
I
CBO
I
CES
I
EBO
h
FE
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
Conditions
V
CB
= −15
V; I
E
=
0 A
V
CB
= −15
V; I
E
=
0 A; T
j
=
150
°C
V
CE
= −15
V; V
BE
=
0 V
V
EB
= −5
V; I
C
=
0 A
V
CE
= −2
V; I
C
= −10
mA
V
CE
= −2
V; I
C
= −100
mA
V
CE
= −2
V; I
C
= −500
mA
V
CEsat
collector-emitter
saturation voltage
I
C
= −10
mA; I
B
= −0.5
mA
I
C
= −200
mA; I
B
= −10
mA
I
C
= −500
mA; I
B
= −50
mA
R
CEsat
V
BEsat
V
BEon
f
T
C
c
equivalent
on-resistance
base-emitter
saturation voltage
base-emitter
turn-on voltage
transition frequency
collector capacitance
I
C
= −500
mA; I
B
= −50
mA
I
C
= −500
mA; I
B
= −50
mA
V
CE
= −2
V; I
C
= −100
mA
V
CE
= −5
V; I
C
= −100
mA;
f
=
100 MHz
V
CB
= −10
V; I
E
=
i
e
=
0 A;
f
=
1 MHz
V
CB
=
50 V; I
E
=
0 A
V
CE
=
30 V; I
B
=
0 A
V
CE
=
30 V; I
B
=
0 A; T
j
=
150
°C
V
EB
=
5 V; I
C
=
0 A
V
CE
=
5 V; I
C
=
10 mA
I
C
=
10 mA; I
B
=
0.5 mA
V
CE
=
5 V; I
C
=
100
µA
V
CE
=
0.3 V; I
C
=
20 mA
[1]
[1]
[1]
[1]
Min
-
-
-
-
200
150
90
-
-
-
-
-
-
100
-
Typ
-
-
-
-
-
-
-
-
-
-
300
-
-
280
-
Max
−100
−50
−100
−100
-
-
-
−25
−150
−250
500
−1.1
−0.9
-
10
Unit
nA
µA
nA
nA
Transistor TR1: PNP
mV
mV
mV
mΩ
V
V
MHz
pF
[1]
[1]
Transistor TR2: NPN
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
I(off)
V
I(on)
R1
R2/R1
C
c
[1]
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance
-
-
-
-
30
-
-
2.5
3.3
0.8
-
-
-
-
-
-
1.1
1.9
4.7
1
-
100
1
50
900
-
150
0.5
-
6.1
1.2
2.5
nA
µA
µA
µA
mV
V
V
kΩ
pF
V
CB
=
10 V; I
E
=
i
e
=
0 A; f
=
1 MHz
-
Pulse test: t
p
≤
300
µs; δ ≤
0.02
PBLS1502Y_PBLS1502V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 24 August 2009
4 of 14
NXP Semiconductors
PBLS1502Y; PBLS1502V
15 V PNP BISS loadswitch
600
h
FE
001aaa181
−10
3
V
CEsat
(mV)
−10
2
001aaa185
(1)
400
(1)
(2)
(2)
(3)
200
(3)
−10
0
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
−1
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
V
CE
= −2
V
(1) T
amb
=
150
°C
(2) T
amb
=
25
°C
(3) T
amb
= −55 °C
I
C
/I
B
=
20
(1) T
amb
=
150
°C
(2) T
amb
=
25
°C
(3) T
amb
= −55 °C
Fig 1.
TR1(PNP): DC current gain as a function of
collector current; typical values
Fig 2.
TR1(PNP): Collector-emitter saturation voltage
as a function of collector current; typical
values
001aaa184
−1100
V
BE
(mV)
−900
(1)
001aaa183
−1200
V
BEsat
(mV)
−1000
(1)
−700
(2)
−800
(2)
−500
(3)
−600
(3)
−300
−400
−100
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
−200
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
V
CE
= −2
V
(1) T
amb
= −55 °C
(2) T
amb
=
25
°C
(3) T
amb
=
150
°C
I
C
/I
B
=
20
(1) T
amb
=
150
°C
(2) T
amb
=
25
°C
(3) T
amb
= −55 °C
Fig 3.
TR1(PNP): Base-emitter voltage as a function
of collector current; typical values
Fig 4.
TR1(PNP): Base-emitter saturation voltage as
a function of collector current; typical values
PBLS1502Y_PBLS1502V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 24 August 2009
5 of 14
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