MT46V32M8TG-75ZAT:F datasheet, PDF

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MT46V32M8TG-75ZAT:F: DescriptionDDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.40 INCH, PLASTIC, TSOP-66; Categorystorage storage; File Size4MB，93 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/

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MT46V32M8TG-75ZAT:F Overview

DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66, 0.40 INCH, PLASTIC, TSOP-66

MT46V32M8TG-75ZAT:F Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Micron Technology
Parts packaging code	TSOP
package instruction	TSSOP,
Contacts	66
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.75 ns
Other features	AUTO REFRESH
JESD-30 code	R-PDSO-G66
JESD-609 code	e0
length	22.22 mm
memory density	268435456 bit
Memory IC Type	DDR DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	66
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	105 °C
Minimum operating temperature	-40 °C
organize	32MX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius)	235
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	10.16 mm

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256Mb: x4, x8, x16 DDR SDRAM

Features

Double Data Rate (DDR) SDRAM

MT46V64M4 – 16 Meg x 4 x 4 banks

MT46V32M8 – 8 Meg x 8 x 4 banks

MT46V16M16 – 4 Meg x 16 x 4 banks

Features

• V

= +2.5V ±0.2V, V

Q = +2.5V ±0.2V

• V

= +2.6V ±0.1V, V

Q = +2.6V ±0.1V (DDR400)

• Bidirectional data strobe (DQS) transmitted/

received with data, that is, source-synchronous data

capture (x16 has two – one per byte)

• Internal, pipelined double-data-rate (DDR)

architecture; two data accesses per clock cycle

• Differential clock inputs (CK and CK#)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs; center-

aligned with data for WRITEs

• DLL to align DQ and DQS transitions with CK

• Four internal banks for concurrent operation

• Data mask (DM) for masking write data

(x16 has two – one per byte)

• Programmable burst lengths (BL): 2, 4, or 8

• Auto refresh

–

64ms, 8192-cycle(Commercial & Industrial)

–

16ms, 8192-cycle (Automotive)

• Self refresh (not available on AT devices)

• Longer-lead TSOP for improved reliability (OCPL)

• 2.5V I/O (SSTL_2-compatible)

• Concurrent auto precharge option supported

•

RAS lockout supported (

RAP =

RCD)

Options

Marking

• Configuration

–

64 Meg x 4 (16 Meg x 4 x 4 banks)

64M4

–

32 Meg x 8 (8 Meg x 8 x 4 banks)

32M8

–

16 Meg x 16 (4 Meg x 16 x 4 banks)

16M16

• Plastic package – OCPL

–

66-pin TSOP

–

66-pin TSOP (Pb-free)

• Plastic package

–

60-ball FBGA (8mm x 14mm)

–

60-ball FBGA (8mm x 14mm) (Pb-free)

–

60-ball FBGA (8mm x 12.5mm)

–

60-ball FBGA (8mm x 12.5mm)

(Pb-free)

• Timing – cycle time

–

5ns @ CL = 3 (DDR400B)

-5B

–

6ns @ CL = 2.5 (DDR333) FBGA only

-6

–

6ns @ CL = 2.5 (DDR333) TSOP only

-6T

-75E

–

7.5ns @ CL = 2 (DDR266)

-75Z

–

7.5ns @ CL = 2 (DDR266A)

-75

–

7.5ns @ CL = 2.5 (DDR266B)

• Self refresh

–

Standard

None

–

Low-power self refresh

• Temperature rating

–

Commercial (0°C to +70°C)

None

–

Industrial (–40°C to +85°C)

–

Automotive (–40°C to +105°C)

• Revision

–

x4, x8

–

x16

–

x4, x8, x16

Notes: 1. Only available on Revision F and G.

2. Only available on Revision K.

3. Not recommended for new designs.

4. Contact Micron for availability.

PDF: 09005aef80768abb/Source: 09005aef82a95a3a

256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

256Mb: x4, x8, x16 DDR SDRAM

Table of Contents

State Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6

General Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6

Automotive Tempature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

Functional Block Diagrams. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

Pin and Ball Assignments and Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Electrical Specifications – DC and AC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20

Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37

Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .45

DESELECT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49

NO OPERATION (NOP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49

LOAD MODE REGISTER (LMR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49

ACTIVE (ACT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50

READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .51

WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52

PRECHARGE (PRE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53

BURST TERMINATE (BST) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53

AUTO REFRESH (AR). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53

SELF REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53

Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54

INITIALIZATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54

REGISTER DEFINITION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .57

ACTIVE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .61

READ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .62

WRITE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .74

PRECHARGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .87

AUTO REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .89

SELF REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .90

Power-down (CKE Not Active) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .92

PDF: 09005aef80768abb/Source: 09005aef82a95a3a

256Mb_DDRTOC.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

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