DDR SDRAM 256Mb E-die (x4, x8) Pb-Free
DDR SDRAM
256Mb E-die DDR SDRAM Specification
66 TSOP-II with Pb-Free
(RoHS compliant)
Revision 1.1
October, 2004
Rev. 1.1 October, 2004
DDR SDRAM 256Mb E-die (x4, x8) Pb-Free
256Mb E-die Revision History
Revision 1.0 (February, 2004)
-First release
Revision 1.1 (October, 2004)
-Corrected typo.
DDR SDRAM
Rev. 1.1 October, 2004
DDR SDRAM 256Mb E-die (x4, x8) Pb-Free
Key Features
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency 2, 2.5 (clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• DM for write masking only (x4, x8)
• Auto & Self refresh
• 7.8us refresh interval(8K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II
Pb-Free
package
• RoHS compliant
DDR SDRAM
Ordering Information
Part No.
K4H560438E-UC/LB3
K4H560438E-UC/LAA
K4H560438E-UC/LA2
K4H560438E-UC/LB0
K4H560838E-UC/LB3
K4H560838E-UC/LAA
K4H560838E-UC/LA2
K4H560838E-UC/LB0
32M x 8
64M x 4
Org.
Max Freq.
B3(DDR333@CL=2.5)
AA(DDR266@CL=2)
A2(DDR266@CL=2)
B0(DDR266@CL=2.5)
B3(DDR333@CL=2.5)
AA(DDR266@CL=2)
A2(DDR266@CL=2)
B0(DDR266@CL=2.5)
SSTL2
66pin TSOP II
SSTL2
66pin TSOP II
Interface
Package
Operating Frequencies
B3(DDR333@CL=2.5)
Speed @CL2
Speed @CL2.5
*CL : CAS Latency
133MHz
166MHz
AA(DDR266@CL=2.0)
133MHz
133MHz
A2(DDR266@CL=2.0)
133MHz
133MHz
B0(DDR266@CL=2.5)
100MHz
133MHz
Rev. 1.1 October, 2004
DDR SDRAM 256Mb E-die (x4, x8) Pb-Free
Pin Description
DDR SDRAM
32Mb x 8
64Mb x 4
V
DD
DQ
0
V
DDQ
NC
DQ
1
V
SSQ
NC
DQ
2
V
DDQ
NC
DQ
3
V
SSQ
NC
NC
V
DDQ
NC
NC
V
DD
NC
NC
WE
CAS
RAS
CS
NC
BA
0
BA
1
AP/A
10
A
0
A
1
A
2
A
3
V
DD
V
DD
NC
V
DDQ
NC
DQ
0
V
SSQ
NC
NC
V
DDQ
NC
DQ
1
V
SSQ
NC
NC
V
DDQ
NC
NC
V
DD
NC
NC
WE
CAS
RAS
CS
NC
BA
0
BA
1
AP/A
10
A
0
A
1
A
2
A
3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
66
65
64
63
62
61
60
59
58
V
SS
NC
V
SSQ
NC
DQ
3
V
DDQ
NC
NC
V
SSQ
NC
DQ
2
V
DDQ
NC
NC
V
SSQ
DQS
NC
V
REF
V
SS
DM
CK
CK
CKE
NC
A
12
A
11
A
9
A
8
A
7
A
6
A
5
A
4
V
SS
V
SS
DQ
7
V
SSQ
NC
DQ
6
V
DDQ
NC
DQ
5
V
SSQ
NC
DQ
4
V
DDQ
NC
NC
V
SSQ
DQS
NC
V
REF
V
SS
DM
CK
CK
CKE
NC
A
12
A
11
A
9
A
8
A
7
A
6
A
5
A
4
V
SS
66Pin TSOPII
(400mil x 875mil)
(0.65mm Pin Pitch)
Bank Address
BA0~BA1
Auto Precharge
A10
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
256Mb TSOPII Package Pinout
Organization
64Mx4
32Mx8
Row Address
A0~A12
A0~A12
Column Address
A0-A9, A11
A0-A9
DM is internally loaded to match DQ and DQS identically.
Row & Column address configuration
Rev. 1.1 October, 2004
DDR SDRAM 256Mb E-die (x4, x8) Pb-Free
Package Physical Dimension
DDR SDRAM
Units : Millimeters
(0.80)
(0.50)
(10×)
(10×)
0.125
+0.075
-0.035
(0.50)
0×~8×
(R
0.2
5
)
#66
#34
10.16±0.10
(1.50)
#1
(1.50)
#33
0.665±0.05
0.210±0.05
(0.80)
1.00±0.10
0.
15
)
0.05 MIN
(0.71)
0.65TYP
0.65±0.08
0.30±0.08
(10×)
0.10 MAX
[
0.075 MAX ]
NOTE
1. (
) IS REFERENCE
2. [
] IS ASS’Y OUT QUALITY
(R
66pin TSOPII / Package dimension
Rev. 1.1 October, 2004
(R
0.
25
)
(4
×
)
(R
0.1
5)
(10×)
1.20MAX
22.22±0.10
0.25TYP
0.45~0.75
11.76±0.20
(10.16)
RF/Wirelessly
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