DDTD (xxxx) C
NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR
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Features
•
•
•
•
•
Epitaxial Planar Die Construction
Complementary PNP Types Available (DDTB)
Built-In Biasing Resistors, R1, R2
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 3)
Part Number
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
R1 (NOM)
1K
2.2K
4.7K
10K
0.22K
1K
2.2K
3.3K
2.2K
4.7K
10K
0
R2 (NOM)
1K
2.2K
4.7K
10K
4.7K
10K
10K
10K
OPEN
OPEN
OPEN
10K
Marking
N60
N61
N62
N63
N64
N65
N66
N67
N69
N70
N71
N72
Mechanical Data
•
•
•
•
•
•
•
•
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound,
Note 3. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Marking Information: See Table and Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
OUT
3
C
B
R1
R2
E
1
IN
Top View
2
GND(0)
Package Pin Out Configuration
Maximum Ratings
Supply Voltage, (3) to (2)
Input Voltage, (1) to (2)
@T
A
= 25°C unless otherwise specified
Symbol
V
CC
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
All
Value
50
-10 to +10
-10 to +12
-10 to +30
-10 to +40
-5 to +5
-5 to +10
-5 to +12
-6 to +20
5
500
Unit
V
Characteristic
V
IN
V
Input Voltage, (2) to (1)
V
EBO(MAX)
I
C
V
mA
Output Current
Thermal Characteristics
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Notes:
1.
2.
3.
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
200
625
-55 to +150
Unit
mW
°C/W
°C
Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
No purposefully added lead. Halogen and Antimony Free.
Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
DDTD (xxxx) C
Document number: DS30384 Rev. 10 - 2
1 of 4
www.diodes.com
January 2009
© Diodes Incorporated
DDTD (xxxx) C
Electrical Characteristics - R1, R2 Types
Characteristic
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
Output Voltage
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
DDTD113EC
DDTD123EC
DDTD143EC
DDTD114EC
DDTD122JC
DDTD113ZC
DDTD123YC
DDTD133HC
@T
A
= 25°C unless otherwise specified
Min
0.5
0.5
0.5
0.5
0.5
0.3
0.3
0.3
Typ
Max
Unit
Test Condition
Symbol
V
l(OFF)
⎯
⎯
V
V
CC
= 5V, I
O
= 100μA
Input Voltage
V
l(ON)
⎯
⎯
3.0
3.0
3.0
3.0
3.0
2.0
2.0
2.0
0.3V
7.2
3.8
1.8
0.88
28
7.2
3.6
2.4
0.5
V
V
O(ON)
⎯
⎯
V
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 10mA
V
O
= 0.3V, I
O
= 30mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
I
O
/I
l
= -50mA/-2.5mA
Input Current
I
l
⎯
⎯
mA
V
I
= 5V
Output Current
I
O(OFF)
DC Current Gain
G
l
Input Resistor Tolerance
Resistance Ratio Tolerance
Gain-Bandwidth Product*
ΔR
1
Δ(R
2
/R
1
)
f
T
⎯
33
39
47
56
47
56
56
56
-30
-20
⎯
⎯
μA
V
CC
= 50V, V
I
= 0V
⎯
⎯
⎯
V
O
= 5V, I
O
= 50mA
⎯
⎯
200
+30
+20
⎯
⎯
⎯
V = 10V, I
E
= 5mA,
MHz
CE
f = 100MHz
%
%
Electrical Characteristics - R1 Only, R2 Only Types
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
DDTD123TC
DDTD143TC
DDTD114TC
DDTD114GC
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
ΔR
1
or
ΔR
2
f
T
Min
50
40
5
⎯
⎯
⎯
⎯
300
⎯
100
100
100
56
-30
⎯
@T
A
= 25°C unless otherwise specified
Typ
⎯
⎯
⎯
⎯
⎯
⎯
250
250
250
⎯
⎯
200
Max
⎯
⎯
⎯
0.5
0.5
0.5
0.5
580
0.3
600
600
600
⎯
+30
⎯
Unit
Test Condition
V
I
C
= 50μA
V
I
C
= 1mA
I
E
= 50μA
I
E
= 50μA
V
I
E
= 50μA
I
E
= 720μA
μA
V
CB
= 50V
μA
V
⎯
%
V
EB
= 4V
I
C
= 50mA, I
B
= 2.5mA
I
C
= 50mA, V
CE
= 5V
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Bias Resistor Tolerance
Gain-Bandwidth Product*
* Transistor - For Reference Only
⎯
V
CE
= 10V, I
E
= -5mA,
MHz
f = 100MHz
DDTD (xxxx) C
Document number: DS30384 Rev. 10 - 2
2 of 4
www.diodes.com
January 2009
© Diodes Incorporated
DDTD (xxxx) C
Ordering Information
Part Number
DDTD113EC-7-F
DDTD123EC-7-F
DDTD143EC-7-F
DDTD114EC-7-F
DDTD122JC-7-F
DDTD113ZC-7-F
DDTD123YC-7-F
DDTD133HC-7-F
DDTD123TC-7-F
DDTD143TC-7-F
DDTD114TC-7-F
DDTD114GC-7-F
Notes:
(Note 4)
Case
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
Packaging
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Nxx = Product Type Marking Code (See Page 1)
YM = Date Code Marking
Y = Year (ex: T = 2002)
M = Month (ex: 9 = September)
2008
V
Jun
6
2009
W
Jul
7
2010
X
Aug
8
2011
Y
Sep
9
2012
Z
2013
A
Oct
O
2014
B
Nov
N
2015
C
Dec
D
Nxx
Date Code Key
Year
Code
Month
Code
2002
N
Jan
1
2003
P
Feb
2
2004
R
Mar
3
2005
S
2006
T
Apr
4
Package Outline Dimensions
A
YM
2007
U
May
5
B C
H
K
D
J
F
G
L
M
K1
SOT-23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
-
-
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
-
α
All Dimensions in mm
Suggested Pad Layout
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
DDTD (xxxx) C
Document number: DS30384 Rev. 10 - 2
3 of 4
www.diodes.com
January 2009
© Diodes Incorporated
DDTD (xxxx) C
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DDTD (xxxx) C
Document number: DS30384 Rev. 10 - 2
4 of 4
www.diodes.com
January 2009
© Diodes Incorporated
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