DRA3123E datasheet, PDF - EEWORLD Datasheet

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DRA3123E: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size466KB，4 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html; Environmental Compliance

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DRA3123E Overview

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, 3 PIN

DRA3123E Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Panasonic
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	unknown
Maximum collector current (IC)	0.1 A
Minimum DC current gain (hFE)	6
JESD-30 code	R-PDSO-F3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.1 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

DRA3123E Preview

This product complies with the RoHS Directive (EU 2002/95/EC).

DRA3123E

Silicon PNP epitaxial planar type

For digital circuits

Complementary to DRC3123E

DRA9123E in SSSMini3 type package



Features



Contributes to miniaturization of sets, reduction of component count.



Eco-friendly Halogen-free package



Package



Code

SSSMini3-F2-B



Name

1: Base

2: Emitter

3: Collector

Unit

°C

Resistance value



Packaging

Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)



Absolute Maximum Ratings

= 25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector current

Total power dissipation

Junction temperature

Storage temperature

Symbol

CBO

CEO

stg

Rating

–50

–100

100

150

–55 to +150



Marking Symbol: L2



Internal Connection

2.2

kΩ



Electrical Characteristics

= 25°C±3°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

Input voltage (ON)

Input voltage (OFF)

Input resistance

Resistance ratio

Symbol

CBO

CEO

CBO

CEO

EBO

CE(sat)

I(on)

I(off)

/ R

Conditions

= –10 µA, I

= 0

= –2 mA, I

= 0

= –50 V, I

= 0

= –50 V, I

= 0

= –6 V, I

= 0

= –10 V, I

= –5 mA

= –10 mA, I

= – 0.5 mA

= – 0.2 V, I

= –5 mA

= –5 V, I

= –100 µA

–30%

0.8

2.2

1.0

–1.8

– 0.8

+30%

1.2

Min

–50

– 0.1

– 0.5

–2.0

– 0.30

Typ

Max

Unit

µA



kΩ



Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: December 2010

Ver. BED

This product complies with the RoHS Directive (EU 2002/95/EC).

DRA3123E

DRA3123E_PT-Ta

DRA3123E_IC-VCE

DRA3123E_hFE-IC



150

−120

25°C

−100



140

= −10



Total power dissipation P

(mW)

Forward current transfer ratio h

125

100

120

100

85°C

−30°C

−

0.1

25°C

Collector current I

(mA)

−80

−60

−40

−20

= −800 µA

−700 µA

−600 µA

−500 µA

−400 µA

−300 µA

−2

−4

−6

−8

−10

−12

120

160

200

−1

−10

−100

Ambient temperature T

(

°C

)

DRA3123E_VCEsat-IC

Collector-emitter voltage V

(V)

DRA3123E_I

-V

Collector current I

(mA)

DRA3123E_VIN-IO

CE(sat)



−10

−5

85°C

−100



Collector-emitter saturation voltage V

CE(sat)

(V)

−10

/ I

= 20

= −

0.2 V

Output current I

(mA)

Input voltage V

(V)

−1

25°C

−10

85°C

25°C

−30°C

−10

−1

−30°C

25°C

−1

= −30°C

85°C

−

0.1

−10

−2

−

0.01

−

0.1

−1

−10

−100

−10

−3

−

0.5

−1.0

−1.5

−2.0

−

0.1

−

0.1

−1

−10

−100

Collector current I

(mA)

Input voltage V

(V)

Output current I

(mA)

Ver. BED

This product complies with the RoHS Directive (EU 2002/95/EC).

DRA3123E

SSSMini3-F2-B

Unit: mm

0.30

−

0.02

+0.05

0.80

±0.05

1.20

±0.05

0.20

−

0.02

(0.4)

+0.05

(5°)

0.20

±0.05

1.20

±0.05

0.13

−

0.02

+0.05

0.80

±0.05

(5°)

0 to 0.05

0.52

±0.03

(0.27)

Ver. BED

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1)

If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any

other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any

other company which may arise as a result of the use of technical information described in this book.

(3) The products described in this book are intended to be used for general applications (such as office equipment, communications

equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.

Consult our sales staff in advance for information on the following applications:

–

Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,

life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of

the products may directly jeopardize life or harm the human body.

It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with

your using the products described in this book for any special application, unless our company agrees to your using the products in

this book for any special application.

(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.

20100202

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