RF/Microwave Amplifier, 220 MHz - 225 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
| Parameter Name | Attribute value |
| Maker | Toshiba Semiconductor |
| Reach Compliance Code | unknown |
| Gain | 22 dB |
| Maximum input power (CW) | 24.7 dBm |
| Maximum operating frequency | 225 MHz |
| Minimum operating frequency | 220 MHz |
| Maximum operating temperature | 100 °C |
| Minimum operating temperature | -30 °C |
| RF/Microwave Device Types | NARROW BAND HIGH POWER |
| Maximum voltage standing wave ratio | 2 |

| S-AV15 | S-AV16L | S-AV16H | S-AV16VH | |
|---|---|---|---|---|
| Description | RF/Microwave Amplifier, 220 MHz - 225 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER | RF/Microwave Amplifier, 135 MHz - 150 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER | RF/Microwave Amplifier, 150 MHz - 160 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER | RF/Microwave Amplifier, 160 MHz - 174 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| Maker | Toshiba Semiconductor | Toshiba Semiconductor | Toshiba Semiconductor | Toshiba Semiconductor |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| Maximum input power (CW) | 24.7 dBm | 24 dBm | 24 dBm | 24 dBm |
| Maximum operating frequency | 225 MHz | 150 MHz | 160 MHz | 174 MHz |
| Minimum operating frequency | 220 MHz | 135 MHz | 150 MHz | 160 MHz |
| Maximum operating temperature | 100 °C | 100 °C | 100 °C | 100 °C |
| Minimum operating temperature | -30 °C | -30 °C | -30 °C | -30 °C |
| RF/Microwave Device Types | NARROW BAND HIGH POWER | NARROW BAND HIGH POWER | NARROW BAND HIGH POWER | NARROW BAND HIGH POWER |
| Maximum voltage standing wave ratio | 2 | 2.5 | 2.5 | 2.5 |
| Is it lead-free? | - | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | - | incompatible | incompatible | incompatible |
| Characteristic impedance | - | 50 Ω | 50 Ω | 50 Ω |
| JESD-609 code | - | e0 | e0 | e0 |
| Terminal surface | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |