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Datasheet> All Categories > Discrete semiconductor> The transistor> D44VH10BG
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D44VH10BG

Description
15A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size339KB，59 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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D44VH10BG Overview

15A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

D44VH10BG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Complementary Silicon Power
Transistors
These complementary silicon power transistors are designed for high–speed
switching applications, such as switching regulators and high frequency inverters.
The devices are also well–suited for drivers for high power switching circuits.
•
Fast Switching — tf = 90 ns (Max)
•
Key Parameters Specified @ 100
_
C
•
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 V (Max) @ 8.0 A
•
Complementary Pairs Simplify Circuit Designs
D44VH
PNP
D45VH
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 VOLTS
83 WATTS
NPN
CASE 221A–06
TO–220AB
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MAXIMUM RATINGS
Rating
Symbol
VCEO
VCEV
VEB
IC
ICM
PD
Value
80
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter Base Voltage
100
7.0
15
20
Collector Current — Continuous
— Peak (1)
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
83
0.67
Watts
W/
_
C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
θJC
R
θJA
TL
Max
1.5
Unit
Thermal Resistance, Junction to Case
_
C/W
_
C/W
_
C
Thermal Resistance, Junction to Ambient
62.5
275
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
(1) Pulse Width
v
6.0 ms, Duty Cycle
v
50%.
NOTE: All polarities are shown for NPN transistors. For PNP transistors, reverse polarities.
Motorola Bipolar Power Transistor Device Data
3–413

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