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SID15N10

Description
N-Ch Enhancement Mode Power MOSFET
File Size755KB,4 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet View All

SID15N10 Overview

N-Ch Enhancement Mode Power MOSFET

SID15N10
Elektronische Bauelemente
15A, 100V, R
DS(ON)
110m
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SID15N10 provide the designer with the best
combination of fast switching. The TO-251 package is
universally preferred for all commercial-industrial
surface mount applications. The device is suited for
charger, industrial and consumer environment.
TO-251
FEATURES
R
DS(on)
100m @ V
GS
= 10V
Super high density cell design for extremely low R
DS(on)
Exceptional on-resistance and maximum DC current
capability
A
B
C
D
GE
K
F
H
MARKING
M
J
P
15N10
Date Code
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
TO-251
MPQ
2.5K
Leader Size
13’ inch
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
2.20
2.40
0.45
0.55
6.80
7.20
7.20
7.80
REF.
G
H
J
K
M
P
Millimeter
Min.
Max.
5.40
5.80
0.90
1.50
2.30
0.60
0.90
0.50
0.70
0.45
0.60
2
Drain
1
Gate
3
Source
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
1
Symbol
V
DS
V
GS
T
C
=25°
C
T
C
=70°
C
I
DM
T
C
=25°
C
T
A
=25°
C
P
D
T
J
, T
STG
I
D
Ratings
100
±20
15
13.8
24
34.7
2
-55 ~ 150
Unit
V
V
A
A
A
W
W
°
C
Operating Junction and Storage Temperature Range
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient (PCB
3
mount)
Maximum Thermal Resistance Junction-Case
3
R
θJA
R
θJC
62.5
3.6
° /W
C
° /W
C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Apr-2013 Rev. A
Page 1 of 4
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