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SF28G

Description
2 A, 600 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size216KB,3 Pages
ManufacturerCYSTEKEC
Websitehttp://www.cystekec.com/
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SF28G Overview

2 A, 600 V, SILICON, RECTIFIER DIODE, DO-15

CYStech Electronics Corp.
2.0Amp. Glass Passivated Super Fast Rectifiers
Spec. No. : C185LG
Issued Date : 2013.03.25
Revised Date : 2013.05.03
Page No. : 1/3
SF21G thru SF28G
Features
High current capability
High reliability
Low forward voltage drop
High surge current capability
Mechanical Data
Case: JEDEC DO-204AC(DO-15) molded plastic
Terminals: Solder plated, solderable per MIL-STD-750 method 2026
Polarity: Indicated by cathode band.
Epoxy : UL94V-0 rate flame retardant
Weight : 0.014oz., 0.39grams
Maximum Ratings and Electrical Characteristics
(
Rating at 25°C ambient temperature unless otherwise specified. )
Parameter
Repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum instantaneous
forward voltage, I
F
=2A
(Note 1)
Reverse Recovery Time
Average forward rectified current
@T
A
=95
Peak forward surge current @8.3ms
single half sine wave superimposed
on rated load (JEDEC method)
Maximum DC reverse current
V
R
=V
RRM
,T
A
=25
(Note 1)
V
R
=V
RRM
,T
A
=100
(Note 1)
Storage temperature
Operating temperature
Symbol
V
RRM
V
RMS
V
R
V
F
trr
I
FAV
I
FSM
SF
21G
50
35
50
SF
22G
100
70
100
SF
23G
150
105
150
Type
SF
SF
24G 25G
200
300
140
210
200
300
1.3
35
2
50
SF
26G
400
280
400
SF
27G
500
350
500
1.7
SF Units
28G
600
V
420
V
600
V
V
ns
A
A
0.95
I
R
Tstg
T
J
5
100
-55 ~ +150
-55 ~ +150
μA
μA
Notes : 1. Pulse test, pulse width=300μsec, 2% duty cycle
2 .
Reverse recovery test condition: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
SF21G thru SF28G
CYStek Product Specification

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