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PMT200EPEAX

Description
PMT200EPEA - 70 V, P-channel Trench MOSFET SC-73 4-Pin
CategoryDiscrete semiconductor    The transistor   
File Size758KB,16 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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PMT200EPEAX Overview

PMT200EPEA - 70 V, P-channel Trench MOSFET SC-73 4-Pin

PMT200EPEAX Parametric

Parameter NameAttribute value
Brand NameNexperia
Is it Rohs certified?conform to
MakerNexperia
Parts packaging codeSC-73
package instructionSC-73, 4 PIN
Contacts4
Manufacturer packaging codeSOT223
Reach Compliance Codecompliant
Other featuresLOGIC LEVEL COMPATIBLE
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage70 V
Maximum drain current (ID)2.4 A
Maximum drain-source on-resistance0.167 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
GuidelineAEC-Q101; IEC-60134
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

PMT200EPEAX Preview

PMT200EPEA
26 October 2016
70 V, P-channel Trench MOSFET
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Logic level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
3. Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DS
V
GS
I
D
R
DSon
[1]
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
Conditions
T
j
= 25 °C
V
GS
= -10 V; T
amb
= 25 °C
V
GS
= -10 V; I
D
= -2.4 A; T
j
= 25 °C
[1]
Min
-
-20
-
-
Typ
-
-
-
130
Max
-70
20
-2.4
167
2
Unit
V
V
A
Static characteristics
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .
Nexperia
PMT200EPEA
70 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
4
Symbol Description
G
D
S
D
gate
drain
source
drain
1
2
3
G
Simplified outline
4
Graphic symbol
D
SC-73 (SOT223)
S
017aaa259
6. Ordering information
Table 3. Ordering information
Type number
PMT200EPEA
Package
Name
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
7. Marking
Table 4. Marking codes
Type number
PMT200EPEA
Marking code
T2EPEA
PMT200EPEA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
26 October 2016
2 / 16
Nexperia
PMT200EPEA
70 V, P-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
I
DM
E
DS(AL)S
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
non-repetitive drain-
source avalanche
energy
total power dissipation
V
GS
= -10 V; T
amb
= 25 °C
V
GS
= -10 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤ 10 µs
T
j(init)
= 25 °C; I
D
= -1.3 A; DUT in
avalanche (unclamped)
T
amb
= 25 °C
T
sp
= 25 °C
T
j
T
amb
T
stg
I
S
V
ESD
[1]
[2]
[3]
[2]
[1]
[1]
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
-
-
-
Max
-70
20
-2.4
-1.5
-9.7
19.5
Unit
V
V
A
A
A
mJ
P
tot
-
-
-
-55
-55
-65
800
1.75
8.3
150
150
150
-1.8
2000
2
mW
W
W
°C
°C
°C
A
V
junction temperature
ambient temperature
storage temperature
source current
electrostatic discharge
voltage
T
amb
= 25 °C
HBM
[1]
Source-drain diode
-
-
ESD maximum rating
[3]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Measured between all pins.
PMT200EPEA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
26 October 2016
3 / 16
Nexperia
PMT200EPEA
70 V, P-channel Trench MOSFET
120
P
der
(%)
80
017aaa123
120
I
der
(%)
80
017aaa124
40
40
0
- 75
- 25
25
75
125
T
j
(°C)
175
0
- 75
- 25
25
75
125
T
j
(°C)
175
Fig. 1.
-10
2
I
D
(A)
-10
Normalized total power dissipation as a
function of junction temperature
Fig. 2.
Normalized continuous drain current as a
function of junction temperature
aaa-023945
Limit R
DSon
= V
DS
/I
D
t
p
= 10 µs
t
p
= 100 µs
1
DC; T
amb
= 25 °C; drain mounting pad 6 cm
2
-10
-1
DC; T
sp
= 25 °C
t
p
= 1 ms
t
p
= 10 ms
t
p
= 100 ms
-10
-2
-10
-1
-1
-10
-10
2
V
DS
(V)
-10
3
I
DM
= single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
PMT200EPEA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
26 October 2016
4 / 16
Nexperia
PMT200EPEA
70 V, P-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
R
th(j-a)
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
[1]
[2]
Min
-
-
-
Typ
135
54
7
Max
155
70
15
Unit
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
10
3
Z
th(j-a)
(K/W)
duty cycle = 1
10
2
0.50
0.25
0.10
10
0.02
0
1
10
-3
10
-2
10
-1
1
10
10
2
10
3
0.05
0.01
0.75
0.33
0.20
aaa-023946
t
p
(s)
FR4 PCB, standard footprint
Fig. 4.
10
2
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.50
0.25
10
0.10
0.05
0.02
0
1
10
-3
0.01
0.33
0.20
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-023947
10
-2
10
-1
2
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMT200EPEA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
26 October 2016
5 / 16
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