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2N2907APBFREE

Description
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18,
CategoryDiscrete semiconductor    The transistor   
File Size609KB,3 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
Download Datasheet Parametric View All

2N2907APBFREE Overview

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18,

2N2907APBFREE Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCentral Semiconductor
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codecompliant
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.4 W
surface mountNO
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Maximum off time (toff)100 ns
Maximum opening time (tons)45 ns

2N2907APBFREE Preview

2N2906
2N2907
2N2906A
2N2907A
w w w. c e n t r a l s e m i . c o m
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2906, 2N2907
series types are silicon PNP epitaxial planar transistors
designed for small signal, general purpose switching
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
2N2906
2N2907
60
40
2N2906A
2N2907A
60
60
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ
JA
Θ
JC
5.0
600
400
1.8
-65 to +200
438
97
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
2N2906
2N2907
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=50V
-
20
ICBO
VCB=50V, TA=150°C
-
20
ICEV
VCE=30V, VEB=0.5V
-
50
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
fT
Cob
Cib
ton
toff
IC=10μA
IC=10mA
IE=10μA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=20V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VEB=2.0V, IC=0, f=1.0MHz
VCC=30V, IC=150mA, IB1=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
60
40
5.0
-
-
-
-
200
-
-
-
-
-
-
-
0.4
1.6
1.3
2.6
-
8.0
30
45
100
2N2906A
2N2907A
MIN
MAX
-
10
-
-
60
60
5.0
-
-
-
-
200
-
-
-
-
10
50
-
-
-
0.4
1.6
1.3
2.6
-
8.0
30
45
100
UNITS
nA
μA
nA
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
R4 (30-January 2012)
2N2906
2N2907
2N2906A
2N2907A
PNP SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued:
(TA=25°C)
SYMBOL
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCE=10V, IC=0.1mA (2N2906, 2N2907)
VCE=10V, IC=0.1mA (2N2906A, 2N2907A)
VCE=10V, IC=1.0mA (2N2906, 2N2907)
VCE=10V, IC=1.0mA (2N2906A, 2N2907A)
VCE=10V, IC=10mA (2N2906, 2N2907)
VCE=10V, IC=10mA (2N2906A, 2N2907A)
VCE=10V, IC=150mA
VCE=10V, IC=500mA (2N2906, 2N2907)
VCE=10V, IC=500mA (2N2906A, 2N2907A)
2N2906
2N2906A
MIN
MAX
20
-
40
-
25
-
40
-
35
-
40
-
40
120
20
-
40
-
2N2907
2N2907A
MIN
MAX
35
-
75
-
50
-
100
-
75
-
100
-
100
300
30
-
50
-
TO-18 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
R4 (30-January 2012)
w w w. c e n t r a l s e m i . c o m
OUTSTANDING SUPPORT AND SUPERIOR SERVICES
PRODUCT SUPPORT
Central’s operations team provides the highest level of support to insure product is delivered on-time.
• Supply management (Customer portals)
• Custom bar coding for shipments
• Inventory bonding
• Custom product packing
• Consolidated shipping options
DESIGNER SUPPORT/SERVICES
Central’s applications engineering team is ready to discuss your design challenges. Just ask.
• Free quick ship samples (2
nd
day air)
• Special wafer diffusions
• Online technical data and parametric search
• PbSn plating options
• SPICE models
• Package details
• Custom electrical curves
• Application notes
• Environmental regulation compliance
• Application and design sample kits
• Customer specific screening
• Custom product and package development
• Up-screening capabilities
CONTACT US
Corporate Headquarters & Customer Support Team
Central Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Main Tel: (631) 435-1110
Main Fax: (631) 435-1824
Support Team Fax: (631) 435-3388
www.centralsemi.com
Worldwide Field Representatives:
www.centralsemi.com/wwreps
Worldwide Distributors:
www.centralsemi.com/wwdistributors
For the latest version of Central Semiconductor’s
LIMITATIONS AND DAMAGES DISCLAIMER,
which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
w w w. c e n t r a l s e m i . c o m
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