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Datasheet> All Categories > Discrete semiconductor> The transistor> Q68000-A6474
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Q68000-A6474

Description
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size184KB，7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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Q68000-A6474 Overview

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

Q68000-A6474 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Maximum off time (toff)110 ns
Maximum opening time (tons)50 ns

Q68000-A6474 Preview

PNP Silicon Switching Transistors
SMBT 2907
SMBT 2907 A
q
High DC current gain: 0.1 mA to 500 mA
q
Low collector-emitter saturation voltage
q
Complementary types: SMBT 2222,
SMBT 2222 A (NPN)
Type
SMBT 2907
SMBT 2907 A
Marking
s2B
s2F
Ordering Code
(tape and reel)
Q68000-A6501
Q68000-A6474
Pin Configuration
1
2
3
B
E
C
Package
1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation,
T
S
=
77 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
≤
290
≤
220
Symbol
V
CE0
V
CB0
V
EB0
I
C
P
tot
T
j
T
stg
Values
Unit
SMBT 2907
SMBT 2907 A
40
60
60
5
600
330
150
– 65 … + 150
mA
mW
˚C
V
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91
SMBT 2907
SMBT 2907 A
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA
SMBT 2907
SMBT 2907 A
Collector-base breakdown voltage
I
C
= 10
µ
A
SMBT 2907
SMBT 2907 A
Emitter-base breakdown voltage
I
E
= 10
µ
A
Collector cutoff current
V
CB
= 50 V
V
CB
= 50 V
V
CB
= 50 V,
T
A
= 150 ˚C
V
CB
= 50 V,
T
A
= 150 ˚C
Emitter cutoff current
V
EB
= 3 V
DC current gain
1)
I
C
= 100
µ
A,
V
CE
= 10 V
I
C
=
1 mA,
V
CE
= 10 V
SMBT 2907
SMBT 2907 A
SMBT 2907
SMBT 2907 A
SMBT 2907
SMBT 2907 A
SMBT 2907
SMBT 2907 A
SMBT 2907
SMBT 2907 A
V
CEsat
–
–
V
BEsat
–
–
–
–
1.3
2.6
–
–
0.4
1.6
SMBT 2907
SMBT 2907 A
SMBT 2907
SMBT 2907 A
I
EB0
h
FE
35
75
50
100
75
100
100
100
30
50
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
300
300
–
–
V
V
(BR)CE0
40
60
V
(BR)CB0
60
60
V
(BR)EB0
I
CB0
–
–
–
–
–
–
–
–
–
–
20
10
20
10
10
nA
nA
µ
A
µ
A
nA
–
5
–
–
–
–
–
–
–
–
–
–
V
Values
typ.
max.
Unit
I
C
= 10 mA,
V
CE
= 10 V
1)
I
C
= 150 mA,
V
CE
= 10 V
1)
I
C
= 500 mA,
V
CE
= 10 V
1)
Collector-emitter saturation voltage
1)
I
C
= 150 mA,
I
B
= 15 mA
I
C
= 500 mA,
I
B
= 50 mA
Base-emitter saturation voltage
1)
I
C
= 150 mA,
I
B
= 15 mA
I
C
= 500 mA,
I
B
= 50 mA
1)
Pulse test conditions:
t
≤
300
µ
s,
D
= 2 %.
Semiconductor Group
2
SMBT 2907
SMBT 2907 A
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
AC characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 20 V,
f
= 100 MHz
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
V
CC
= 30 V,
I
C
= 150 mA,
I
B1
= 15 mA
Delay time
Rise time
V
CC
= 6 V,
I
C
= 150 mA,
I
B1
=
I
B2
= 15 mA
Storage time
Fall time
f
T
C
obo
C
ibo
200
–
–
–
–
–
–
8
30
MHz
pF
Values
typ.
max.
Unit
t
d
t
r
t
stg
t
f
–
–
–
–
–
–
–
–
10
40
80
30
ns
ns
ns
ns
Test circuits
Delay and rise time
Storage and fall time
Semiconductor Group
3
SMBT 2907
SMBT 2907 A
Total power dissipation
P
tot
=
f
(T
A
*;
T
S
)
* Package mounted on epoxy
Collector-base capacitance
C
CB
=
f
(V
CB
)
f
= 1 MHz
Permissible pulse load
P
tot max
/P
tot DC
=
f
(t
p
)
Transition frequency
f
T
=
f
(I
C
)
V
CE
= 20 V
Semiconductor Group
4
SMBT 2907
SMBT 2907
SMBT 2907 A
SMBT 2907 A
Saturation voltage
I
C
=
f
(V
BEsat
,
V
CEsat
)
h
FE
= 10
Delay time
t
d
=
f
(I
C
)
Rise time
t
r
=
f
(I
C
)
h
FE
= 10
Storage time
t
stg
=
f
(I
C
)
Fall time
t
f
=
f
(I
C
)
Semiconductor Group
5
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

Q68000-A6474 Related Products

Q68000-A6474 Q68000-A6501 SMBT2907
Description Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
Maker Infineon Infineon Infineon
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SOT-23, 3 PIN
Reach Compliance Code compliant compliant not_compliant
Maximum collector current (IC) 0.6 A 0.6 A 0.6 A
Collector-emitter maximum voltage 60 V 40 V 40 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 50 30 30
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz
Maximum off time (toff) 110 ns 110 ns 110 ns
Maximum opening time (tons) 50 ns 50 ns 50 ns

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