KRC885T-B datasheet, PDF - EEWORLD Datasheet

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KRC885T-B: DescriptionSmall Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon, TS6, 6 PIN; CategoryDiscrete semiconductor The transistor; File Size346KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KRC885T-B Overview

Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon, TS6, 6 PIN

KRC885T-B Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	SMALL OUTLINE, R-PDSO-G6
Contacts	6
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTOR
Maximum collector current (IC)	0.3 A
Collector-emitter maximum voltage	20 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	350
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz

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SEMICONDUCTOR

TECHNICAL DATA

SWITCHING APPLICATION.

AUDIO MUTING APPLICATION.

KRC881T~KRC886T

EPITAXIAL PLANAR NPN TRANSISTOR

E

FEATURES

・

High emitter-base voltage : V

EBO

=25V(Min)

・

High reverse h

FE

: reverse h

FE

=150(Typ.) (V

CE

=-2V, I

C

=-4mA)

・

Low on resistance : R

on

=1Ω(Typ.) (I

B

=5mA)

・

With Built-in Bias Resistors.

・

Simplify Circuit Design.

・

Reduce a Quantity of Parts and Manufacturing Process.

EQUIVALENT CIRCUIT

C

R1

B

Q1

Q2

K

B

K

1

6

2

5

DIM

A

B

C

D

E

F

G

H

I

J

K

L

3

4

MILLIMETERS

_

2.9 + 0.2

1.6+0.2/-0.1

_

0.70 + 0.05

+ 0.1

0.4 _

2.8+0.2/-0.3

_

1.9 + 0.2

0.95

_

0.16 + 0.05

0.00-0.10

0.25+0.25/-0.15

0.60

0.55

A

F

G

C

J

6

5

4

1.

2.

3.

4.

5.

6.

Q

1

Q

1

Q

2

Q

2

Q

2

Q

1

EMITTER

BASE

COLLECTOR

EMITTER

BASE

COLLECTOR

E

1

2

3

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

* Package mounted on a ceramic board (600㎟×0.8㎜)

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

P

C

*

T

j

T

stg

RATING

50

20

25

300

0.9

150

-55½150

UNIT

V

mA

W

℃

MARK SPEC

h

FE

classification

TYPE

B

KRC881T

KRC882T

KRC883T

KRC884T

KRC885T

KRC886T

MQB

MRB

Type Name

Marking

6

5

4

h

FE

Rank

MSB

MTB

1

2

3

MUB

MVB

2008. 11. 20

Revision No : 3

I

EQUIVALENT CIRCUIT (TOP VIEW)

L

H

J

TS6

Lot No.

D

1/2

KRC885T-B Related Products

	KRC885T-B	KRC884T-B	KRC881T-B	KRC882T-B	KRC883T-B	KRC886T-B
Description	Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon, TS6, 6 PIN	Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon, TS6, 6 PIN	Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon, TS6, 6 PIN	Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon, TS6, 6 PIN	Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon, TS6, 6 PIN	Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon, TS6, 6 PIN
package instruction	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6
Contacts	6	6	6	6	6	6
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR
Maximum collector current (IC)	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A
Collector-emitter maximum voltage	20 V	20 V	20 V	20 V	20 V	20 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	350	350	350	350	350	350
JESD-30 code	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6
Number of components	2	2	2	2	2	2
Number of terminals	6	6	6	6	6	6
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	30 MHz	30 MHz	30 MHz	30 MHz	30 MHz
Maker	KEC	KEC	-	KEC	KEC	KEC

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