KSR2011D26Z datasheet, PDF - EEWORLD Datasheet

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KSR2011D26Z: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92; CategoryDiscrete semiconductor The transistor; File Size24KB，3 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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KSR2011D26Z Overview

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

KSR2011D26Z Parametric

Parameter Name	Attribute value
Maker	Fairchild
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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KSR2011

Switching Application

(Bias Resistor Built In)

• Switching circuit, Inverter, Interface circuit, Driver Circuit

• Built in bias Resistor (R=22KΩ)

• Complement to KSR1011

TO-92

1. Emitter 2. Collector 3. Base

Equivalent Circuit

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

=25°C unless otherwise noted

Symbol

CBO

CEO

EBO

STG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Parameter

Value

-40

-5

-100

300

150

-55 ~ 150

Units

°C

Electrical Characteristics

=25°C unless otherwise noted

Symbol

CBO

CEO

CBO

(sat)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Output Capacitance

Current Gain Bandwidth Product

Input Resistor

Test Condition

= -100µA, I

= -1mA, I

= -30V, I

= -5V, I

= -1mA

= -10mA, I

= -1mA

= -10V, I

f=1MHz

= -10V, I

= -5mA

5.5

200

100

Min.

-40

-0.1

600

-0.3

MHz

KΩ

Typ.

Max.

Units

µA

Rev. A1, July 2001

KSR2011D26Z Related Products

	KSR2011D26Z	KSR2011D74Z	KSR2011D75Z	KSR2011J05Z	KSR2011D27Z	KSR2011J18Z
Description	Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknow	unknow	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	40 V	40 V	40 V	40 V	40 V	40 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100	100	100	100	100	100
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
Maker	Fairchild	-	-	Fairchild	Fairchild	Fairchild
JEDEC-95 code	TO-92	TO-92	TO-92	-	TO-92	-

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