KSA709
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE AMPLIFIER
•
Collector-Base Voltage: V
CBO
= -160V
•
Collector Dissipation: P
C
=800mW
•
Complement to KSC1009
TO-92
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C)
°
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Rating
-160
-150
-8
-700
800
150
-55 ~ 150
Unit
V
V
V
mA
mW
°C
°C
1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (T
A
=25°C)
°
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current-Gain-Bandwidth Product
Output Capacitance
* Pulse Test: PW≤350µs, Duty cycle≤2%
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Test Conditions
I
C
= -100µA, I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -100µA, I
C
=0
V
CB
= -100V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -2V, I
C
= -50mA*
IC= -200mA, IB= -20mA*
IC= -200mA, IC= -20mA*
V
CE
= -10V, I
C
= -50mA
V
CB
= -10V, I
E
=0
f=1MHz
Min
-160
-150
-8
-0.1
-0.1
400
-0.4
-1.0
10
Typ
Max
Unit
V
V
V
µA
µA
V
V
MHz
pF
40
-0.3
-0.9
50
h
FE
CLASSIFICATION
Classification
h
FE
R
40-80
O
70-140
Y
120-240
G
200-400
Rev. B
©
1999 Fairchild Semiconductor Corporation
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not intended to be an exhaustive list of all such trademarks.
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2
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TM
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®
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DISCLAIMER
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As used herein:
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be reasonably expected to cause the failure of the life
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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Embedded System
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