MGA-31689
0.5 W High Gain Driver Amplifier
Data Sheet
Description
Avago Technologies’ MGA-31689 is a 0.5 W, high Gain,
high performance Driver Amplifier MMIC, housed in a
standard SOT-89 plastic package. The device required
simple matching components to achieve optimum per-
formance within specific 100 to 200 MHz bandwidth.
MGA-31689 is especially ideal for wireless infrastructure
applications that operate within the 1.5 GHz to 3 GHz
frequency range. With high IP3 and low noise figure, the
MGA-31689 may be utilized as a driver amplifier in the
transmit chain and as second or third stage LNA in the re-
ceive chain. For optimum performance at lower frequency
from 450 MHz to 1500 MHz, MGA-31589 is recommended.
MGA-31689’s high gain and high linearity features are
achieved through the use of Avago Technologies’ propri-
etary 0.25
mm
GaAs Enhancement-mode pHEMT process.
Features
•
ROHS compliant
•
Halogen free
•
High linearity at low DC bias power
[1]
•
High Gain
•
Low noise figure
•
High OIP3
•
Advanced enhancement mode PHEMT Technology
•
Excellent uniformity in product specification
•
SOT-89 standard package
Specifications
At 1900 MHz, Vdd = 5 V, Idd = 168 mA (typical) at 25° C
•
OIP3 = 44.9 dBm
•
Noise Figure = 1.9 dB
•
Gain = 18.1 dB
•
P1dB = 27.6 dBm
Pin connections and Package Marking
16X
#1
#2
RFin
GND
Top View
#3
RFout
#3
#2
RFout
GND
#1
RFin
•
IRL = 14.0 dB, ORL = 11.5 dB
Note:
1. The MGA-31689 has a superior LFOM of 15.5. Linearity Figure of Merit
(LFOM) is essentially OIP3 divided by DC bias power.
VDD
C
C
C
L
C
RF OUT
L
Bottom View
Note:
Top View: Package marking provides orientation and identification
“16” = Device Code
“X” = Date Code character indentifies month of manufacturing
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 150 V
ESD Human Body Model = 650 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
RF IN
C
MGA-31689
L
C
C
Figure 1. Simplified Schematic diagram
MGA-31689 Absolute Maximum Rating
[1]
Symbol
V
dd, max
P
d
P
in
T
j
T
STG
Thermal Resistance
Units
V
mW
dBm
°C
°C
Parameter
Drain Voltage, RF output to ground
Power Dissipation
(2)
CW RF Input Power
Junction Temperature
Storage Temperature
Absolute Max.
5.5
1050
15
150
-65 to 150
Thermal Resistance
[3]
(V
dd
= 5.0 V, I
dd
= 168 mA, T
c
= 85° C),
θ
jc
= 44° C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Source lead temperature is 25° C. Derate 22.7
mW/° C for T
L
>103.8° C.
3. Thermal resistance measured using 150° C
Infra-Red Microscopy Technique.
MGA-31689 Electrical Specification
[1]
T
C
= 25° C, Z
o
= 50
W,
V
dd
= 5 V, unless specified.
Symbol
I
ds
NF
Gain
OIP3
P1dB
PAE
IRL
ORL
ISOL
Parameter and Test Condition
Quiescent Current
Noise Figure
Gain
Output Third Order Intercept Point
Output Power at 1 dB Gain Compression
Power Added Efficiency at P1dB
Input Return Loss
Output Return Loss
Isolation
Frequency
(MHz)
NA
1900
2600
1900
2600
1900
[2]
2600
[3]
1900
2600
1900
2600
1900
2600
1900
2600
1900
2600
Units
mA
dB
dB
dBm
dBm
%
dB
dB
dB
Min.
140
Typ.
168
1.9
2.2
Max.
195
2.8
19.6
16.6
41
26.5
18.1
16.7
44.9
44.8
27.6
26.8
48.0
42.6
14.0
13.2
11.5
10.5
27.3
27.6
Note :
1. Measurements obtained from a test circuit described in Figure 27.
2. OIP3 test condition: F1 - F2 = 1.0 MHz, with input power of -6 dBm per tone measured at worst case side band.
3. OIP3 test condition: F1 - F2 = 1.0 MHz, with input power of -5 dBm per tone measured at worst case side band.
2
MGA-31689 Consistency Distribution Charts
[1,2]
LSL
USL
LSL
150
160
170
180
190
27
28
29
Figure 2. Idd at Vdd = 5 V, LSL = 150 mA , Nominal = 168 mA, USL = 195 mA
Figure 3. OP1dB at 1900 MHz, Vdd = 5 V, LSL = 26.3 dBm, Nominal = 27.6
dBm
LSL
USL
USL
16
17
18
19
20
1
2
3
Figure 4. Gain at 1900 MHz, Vdd = 5 V, LSL = 16.6 dB, Nominal = 18.1 dB,
USL = 19.6 dB
Figure 5. NF at 1900 MHz, Vdd = 5 V, Nominal = 1.9 dB, USL = 2.8 dB
LSL
40
41
42
43
44
45
46
47
48
49
50
Figure 6. OIP3 at 1900 MHz, Vdd = 5 V, LSL = 41.0 dBm, Nominal = 44.9 dBm
Notes:
1. Data sample size is 2700 samples taken from 5 wafers and 3 different
wafer lots. Future wafers allocated to this product may have nominal
values anywhere between the upper and lower limits.
2. Measurements are made on production test board which represents
a trade off between nominal Gain, NF, OIP3, and OP1dB. Circuit losses
have been de-embedded from actual measurements.
3
MGA-31689 Application Circuit Data for 1900 MHz
T
A
= 25° C, V
dd
= 5.0 V, I
dd
= 168 mA
50
45
OP1dB (dBm)
25° C
85° C
-40° C
1800
1900
Frequency (MHz)
2000
OIP3 (dBm)
40
35
30
1700
30
29
28
27
26
25
1700
25° C
85° C
-40° C
1800
1900
Frequency (MHz)
2000
Figure 7. Over Temperature OIP3 vs Frequency
Figure 8. Over Temperature OP1dB vs Frequency
18.8
18.6
Gain( dB)
18.4
18.2
18.0
17.8
1700
25° C
85° C
-40° C
IRL (dB)
-6
-8
-10
-12
-14
-16
-18
1800
1900
Frequency (MHz)
2000
-20
1700
1800
1900
Frequency (MHz)
2000
25° C
85° C
-40° C
Figure 9. Over Temperature Gain vs Frequency
Figure 10. Over Temperature IRL vs Frequency
-6
-8
-10
ORL (dB)
-12
-14
-16
-18
-20
1700
1800
1900
Frequency (MHz)
2000
25° C
85° C
-40° C
Isolation (dB)
-25
-26
-27
-28
-29
-30
1700
1800
1900
Frequency (MHz)
2000
25° C
85° C
-40° C
Figure 11. Over Temperature ORL vs Frequency
Figure 12. Over Temperature Isolation vs Frequency
4
MGA-31689 Application Circuit Data for 1900 MHz
(continued)
3.5
3.0
NF (dB)
2.5
2.0
1.5
1.0
1700
25° C
85° C
-40° C
OIP3 (dBm)
50
45
40
35
30
25° C
85° C
-40° C
8
9
10
11
12 13 14
Pout (dBm)
15
16
17
18
1800
1900
Frequency (MHz)
2000
Figure 13. Over Temperature Noise Figure vs Frequency
Figure 14. Over Temperature OIP3 vs Pout at 1900 MHz
-42
-44
W-CDMA 3GPP
-46
Test Model 1+64 DPCH, 3.84 MHz BW
-48
-50
-52
-54
-56
-58
-60
-62
-64
1900 MHz @ 25° C
-66
-68
1900 MHz @ 85° C
-70
1900 MHz @ -40° C
-72
-74
10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0
Pout
5
4
K-factor
3
2
1
0
25˚C
85˚C
-40˚C
ACLR (dBc)
0
5
10
Frequency (GHz)
15
20
Figure 15. Over Temperature ACLR vs Pout at 1900 MHz
Figure 16. Over Temperature K-factor vs Frequency
5
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