Small Signal Field-Effect Transistor, 0.31A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-237AA, TO-237, 3 PIN
| Parameter Name | Attribute value |
| Maker | TEMIC |
| package instruction | CYLINDRICAL, O-PBCY-W3 |
| Reach Compliance Code | unknown |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (ID) | 0.31 A |
| Maximum drain-source on-resistance | 5 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 25 pF |
| JEDEC-95 code | TO-237AA |
| JESD-30 code | O-PBCY-W3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | P-CHANNEL |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| VP1008M | VP0808L | VP0808M | VP1008B | VP0808B | |
|---|---|---|---|---|---|
| Description | Small Signal Field-Effect Transistor, 0.31A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-237AA, TO-237, 3 PIN | Small Signal Field-Effect Transistor, 0.28A I(D), 80V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA, TO-226AA (TO-92), 3 PIN | Small Signal Field-Effect Transistor, 0.31A I(D), 80V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-237AA, TO-237, 3 PIN | Power Field-Effect Transistor, 0.79A I(D), 100V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, | Power Field-Effect Transistor, 0.88A I(D), 80V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V | 80 V | 80 V | 100 V | 80 V |
| Maximum drain current (ID) | 0.31 A | 0.28 A | 0.31 A | 0.79 A | 0.88 A |
| Maximum drain-source on-resistance | 5 Ω | 5 Ω | 5 Ω | 5 Ω | 5 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-237AA | TO-226AA | TO-237AA | TO-205AD | TO-205AD |
| JESD-30 code | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
| Maker | TEMIC | - | - | TEMIC | TEMIC |
| package instruction | CYLINDRICAL, O-PBCY-W3 | TO-226AA (TO-92), 3 PIN | CYLINDRICAL, O-PBCY-W3 | - | - |
| Shell connection | DRAIN | - | DRAIN | DRAIN | DRAIN |
| Maximum feedback capacitance (Crss) | 25 pF | 25 pF | 25 pF | - | - |
京公网安备 11010802033920号
EEWORLD
