NDP610B datasheet, PDF - EEWORLD Datasheet

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NDP610B: Description24A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size127KB，6 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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NDP610B Overview

24A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN

NDP610B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Texas Instruments
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	24 A
Maximum drain current (ID)	24 A
Maximum drain-source on-resistance	0.08 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	100 W
Maximum power dissipation(Abs)	100 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON

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Description	24A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN	26A, 100V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	26A, 100V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN	26A, 100V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN	26A, 100V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	24A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	24A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN	24A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	100 V	100 V	100 V	100 V	100 V	100 V	100 V	100 V
Maximum drain current (Abs) (ID)	24 A	26 A	26 A	26 A	26 A	24 A	24 A	24 A
Maximum drain current (ID)	24 A	26 A	26 A	26 A	26 A	24 A	24 A	24 A
Maximum drain-source on-resistance	0.08 Ω	0.065 Ω	0.065 Ω	0.065 Ω	0.065 Ω	0.08 Ω	0.08 Ω	0.08 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-263AB	TO-220AB	TO-220AB	TO-263AB	TO-263AB	TO-220AB	TO-263AB
JESD-30 code	R-PSFM-T3	R-PSSO-G2	R-PSFM-T3	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	2	3	3	2	2	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	SMALL OUTLINE	FLANGE MOUNT	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	100 W	100 W	100 W	100 W	100 W	100 W	100 W	100 W
Maximum power dissipation(Abs)	100 W	100 W	100 W	100 W	100 W	100 W	100 W	100 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	YES	NO	NO	YES	YES	NO	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	Texas Instruments	-	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments

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