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UPD444004LG5-A8-7JD

Description
Standard SRAM, 1MX4, 8ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
Categorystorage    storage   
File Size93KB,16 Pages
ManufacturerNEC Electronics
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UPD444004LG5-A8-7JD Overview

Standard SRAM, 1MX4, 8ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

UPD444004LG5-A8-7JD Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
Parts packaging codeTSOP2
package instructionTSOP2,
Contacts32
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time8 ns
JESD-30 codeR-PDSO-G32
JESD-609 codee0
length20.95 mm
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width4
Number of functions1
Number of terminals32
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX4
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm

UPD444004LG5-A8-7JD Preview

DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD444004L
4M-BIT CMOS FAST SRAM
1M-WORD BY 4-BIT
Description
The
µ
PD444004L is a high speed, low power, 4,194,304 bits (1,048,576 words by 4 bits) CMOS static RAM.
Operating supply voltage is 3.3 V
±
0.3 V.
The
µ
PD444004L is packaged in a 32-pin plastic SOJ and 32-pin plastic TSOP (II).
Features
1,048,576 words by 4 bits organization
Fast access time : 8, 10, 12 ns (MAX.)
Output Enable input for easy application
Single +3.3 V power supply
Ordering Information
Part number
Package
Access time
ns (MAX.)
Supply current mA (MAX.)
At operating
180
160
150
180
160
150
At standby
5
µ
PD444004LLE-A8
µ
PD444004LLE-A10
µ
PD444004LLE-A12
32-pin plastic SOJ
(10.16 mm (400))
8
10
12
µ
PD444004LG5-A8-7JD
Note
µ
PD444004LG5-A10-7JD
Note
µ
PD444004LG5-A12-7JD
Note
32-pin plastic TSOP (II)
(10.16 mm (400))
(Normal bent)
8
10
12
Note
Under development
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14427EJ3V0DS00 (3rd edition)
Date Published January 2001 NS CP(K)
Printed in Japan
The mark
shows major revised points.
©
1999
µ
PD444004L
Pin Configurations (Marking Side)
/××× indicates active low signal.
32-pin plastic SOJ (10.16 mm (400))
[
µ
PD444004LLE ]
32-pin plastic TSOP (II) (10.16 mm (400)) (Normal bent)
[
µ
PD444004LG5-×××
×××-7JD
]
×××
A0
A1
A2
A3
A4
/CS
I/O1
V
CC
GND
I/O2
/WE
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A19
A18
A17
A16
A15
/OE
I/O4
GND
V
CC
I/O3
A14
A13
A12
A11
A10
NC
A0 - A19
: Address Inputs
I/O1 - I/O4 : Data Inputs / Outputs
/CS
/WE
/OE
V
CC
GND
NC
: Chip Select
: Write Enable
: Output Enable
: Power supply
: Ground
: No connection
Remark
Refer to
Package Drawings
for the 1-pin index mark.
2
Data Sheet M14427EJ3V0DS
µ
PD444004L
Block Diagram
Address buffer
A0
|
A19
Row decoder
Memory cell array
4,194,304 bits
I/O1
|
I/O4
Input data
controller
Sense amplifier /
Switching circuit
Column decoder
Output data
controller
Address buffer
/CS
/OE
/WE
V
CC
GND
Truth Table
/CS
H
L
L
L
/OE
/WE
Mode
Not selected
Read
Write
Output disable
I/O
High impedance
D
OUT
D
IN
High impedance
Supply current
I
SB
I
CC
×
L
×
H
L
H
×
H
Remark
×
: Don’t care
Data Sheet M14427EJ3V0DS
3
µ
PD444004L
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
V
CC
V
T
T
A
T
stg
Condition
Rating
–0.5
Note
to +4.0
–0.5
Note
to +4.0
0 to 70
–55 to +125
Unit
V
V
°C
°C
Supply voltage
Input / Output voltage
Operating ambient temperature
Storage temperature
Note
–2.0 V (MIN.) (pulse width : 2 ns)
Caution Exposing the device to stress above those listed in Absolute Maximum Rating could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply voltage
High level input voltage
Low level input voltage
Operating ambient temperature
Symbol
V
CC
V
IH
V
IL
T
A
Condition
MIN.
3.0
2.0
–0.3
Note
0
TYP.
3.3
MAX.
3.6
V
CC
+0.3
+0.8
70
Unit
V
V
V
°C
Note
–2.0 V (MIN.) (pulse width : 2 ns)
4
Data Sheet M14427EJ3V0DS
µ
PD444004L
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter
Input leakage current
Output leakage current
Symbol
I
LI
I
LO
Test condition
V
IN
= 0 V to V
CC
V
I/O
= 0 V to V
CC
,
/CS = V
IH
or /OE = V
IH
or /WE = V
IL
Operating supply current
I
CC
/CS = V
IL
,
I
I/O
= 0 mA,
Minimum cycle time
Standby supply current
I
SB
I
SB1
Cycle time : 8 ns
Cycle time : 10 ns
Cycle time : 12 ns
180
160
150
40
5
mA
mA
MIN.
–2
–2
TYP.
MAX.
+2
+2
Unit
µ
A
µ
A
/CS = V
IH
, V
IN
= V
IH
or V
IL
/CS
V
CC
– 0.2 V,
V
IN
0.2 V or V
IN
V
CC
– 0.2 V
High level output voltage
Low level output voltage
V
OH
V
OL
I
OH
= –4.0 mA
I
OL
= +8.0 mA
2.4
0.4
V
V
Remarks 1.
V
IN
: Input voltage
V
I/O
: Input / Output voltage
2.
These DC characteristics are in common regardless of package types.
Capacitance (T
A
=
25
°
C, f = 1 MHz)
Parameter
Input capacitance
Input / Output capacitance
Symbol
C
IN
C
I/O
V
IN
= 0 V
V
I/O
= 0 V
Test condition
MIN.
TYP.
MAX.
6
8
Unit
pF
pF
Remarks 1.
V
IN
: Input voltage
V
I/O
: Input / Output voltage
2.
These parameters are periodically sampled and not 100% tested.
Data Sheet M14427EJ3V0DS
5

UPD444004LG5-A8-7JD Related Products

UPD444004LG5-A8-7JD UPD444004LG5-A10-7JD UPD444004LG5-A12-7JD
Description Standard SRAM, 1MX4, 8ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 Standard SRAM, 1MX4, 10ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 Standard SRAM, 1MX4, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
Is it Rohs certified? incompatible incompatible incompatible
Maker NEC Electronics NEC Electronics NEC Electronics
Parts packaging code TSOP2 TSOP2 TSOP2
package instruction TSOP2, TSOP2, TSOP2,
Contacts 32 32 32
Reach Compliance Code compliant compliant compliant
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 8 ns 10 ns 12 ns
JESD-30 code R-PDSO-G32 R-PDSO-G32 R-PDSO-G32
JESD-609 code e0 e0 e0
length 20.95 mm 20.95 mm 20.95 mm
memory density 4194304 bit 4194304 bit 4194304 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 4 4 4
Number of functions 1 1 1
Number of terminals 32 32 32
word count 1048576 words 1048576 words 1048576 words
character code 1000000 1000000 1000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C
organize 1MX4 1MX4 1MX4
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 TSOP2 TSOP2
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm 1.2 mm 1.2 mm
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V
surface mount YES YES YES
technology CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface TIN LEAD TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING GULL WING
Terminal pitch 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 10.16 mm 10.16 mm 10.16 mm
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