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DBLS106GC1

Description
Bridge Rectifier Diode, 1A, 800V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size212KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

DBLS106GC1 Overview

Bridge Rectifier Diode, 1A, 800V V(RRM),

DBLS106GC1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage800 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PDSO-G4
Maximum non-repetitive peak forward current30 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage800 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
DBLS101G thru DBLS107G
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Ideal for automated placement
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- UL Recognized File # E-326854
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Bridge Rectifiers
DBLS
MECHANICAL DATA
Case:
Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
Polarity as marked on the body
Weight:
0.36 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3mS)
Maximum instantaneous forward voltage (Note 1)
I
F
= 1 A
Maximum DC reverse current
at rated DC blocking voltage
T
J
=25
T
J
=125℃
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
Cj
R
θjL
R
θjA
T
J
T
STG
40
6.6
1.1
2
100
25
15
40
- 55 to +150
- 55 to +150
O
DBLS
101G
50
35
50
DBLS
102G
100
70
100
DBLS
103G
200
140
200
DBLS
104G
400
280
400
1
DBLS
105G
600
420
600
DBLS
106G
800
560
800
DBLS
107G
1000
700
1000
UNIT
V
V
V
A
30
3.7
A
A
2
s
V
μA
pF
C/W
O
O
Typical junction capacitance per leg (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs,1% Duty Cycle
C
C
Note 2: Measure at 1.0MHz and Applied Reverse Voltage of 4.0 Volts D.C.
Document Number: DS_D1310038
Version: M13

DBLS106GC1 Related Products

DBLS106GC1 DBLS103GC1G DBLS103GC1 DBLS107GC1 DBLS101GC1
Description Bridge Rectifier Diode, 1A, 800V V(RRM), Bridge Rectifier Diode, 1A, 200V V(RRM), Bridge Rectifier Diode, 1A, 200V V(RRM), Bridge Rectifier Diode, 1A, 1000V V(RRM), Bridge Rectifier Diode, 1A, 50V V(RRM),
Is it Rohs certified? conform to conform to conform to conform to conform to
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Minimum breakdown voltage 800 V 200 V 200 V 1000 V 50 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Maximum non-repetitive peak forward current 30 A 40 A 40 A 30 A 40 A
Number of components 4 4 4 4 4
Phase 1 1 1 1 1
Number of terminals 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Guideline AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101
Maximum repetitive peak reverse voltage 800 V 200 V 200 V 1000 V 50 V
surface mount YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL
Maker Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor - Taiwan Semiconductor
package instruction - R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 -
Base Number Matches - 1 1 1 -
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