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BF799

Description
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236, ROHS COMPLIANT PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size1MB,7 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Environmental Compliance  
Download Datasheet Parametric View All

BF799 Overview

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236, ROHS COMPLIANT PACKAGE-3

BF799 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRochester Electronics
Parts packaging codeSOT-23
package instructionROHS COMPLIANT PACKAGE-3
Contacts3
Reach Compliance Codeunknown
Maximum collector current (IC)0.035 A
Collector-based maximum capacity0.7 pF
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
highest frequency bandULTRA HIGH FREQUENCY BAND
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
Humidity sensitivity levelNOT SPECIFIED
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusCOMMERCIAL
surface mountYES
Terminal surfaceNOT SPECIFIED
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)1100 MHz

BF799 Preview

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BF799
NPN Silicon RF Transistor
For linear broadband amplifier
application up to 500 MHz
SAW filter driver in TV tuners
Pb-free (RoHS compliant) package
3
1
2
Type
BF799
Maximum Ratings
Parameter
Marking
LKs
1=B
Pin Configuration
2=E
3=C
Package
SOT23
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
stg
R
thJS
Value
20
30
30
3
35
50
15
280
150
-65 ... 150
Unit
V
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current,
Peak base current
Total power dissipation
T
S
69 °C
1)
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point
2)
1
T
mA
mW
°C
290
K/W
S is measured on the collector lead at the soldering point to the pcb
2
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2011-09-21
BF799
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
Base-emitter breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 20 V,
I
E
= 0
DC current gain
I
C
= 5 mA,
V
CE
= 10 V
I
C
= 20 mA,
V
CE
= 10 V
Collector-emitter saturation voltage
I
C
= 20 mA,
I
B
= 2 mA
Base-emitter saturation voltage
I
C
= 20 mA,
I
B
= 2 mA
V
BEsat
-
-
0.95
V
CEsat
h
FE
35
40
-
95
100
0.1
-
250
0.3
V
-
I
CBO
-
-
100
nA
V
(BR)EBO
3
-
-
V
(BR)CBO
30
-
-
V
(BR)CEO
20
-
-
V
Symbol
min.
Values
typ.
max.
Unit
AC characteristics
Transition frequency
I
C
= 5 mA,
V
CE
= 10 V,
f
= 100 MHz
I
C
= 20 mA,
V
CE
= 8 V,
f
= 100 MHz
Output capacitance
V
CB
= 10 V,
I
E
= 0 mA,
f
= 1 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Collector-emitter capacitance
V
CE
= 10 V,
f
= 1 MHz
Noise figure
I
C
= 5 mA,
V
CE
= 10 V,
f
= 100 MHz,
Z
S
= 50
Output conductance
I
C
= 20 mA,
V
CE
= 10 V,
f
= 35 MHz
2011-09-21
f
T
-
-
C
ob
C
cb
C
ce
F
-
-
-
-
800
1100
0.96
0.7
0.28
3
-
-
-
-
-
-
MHz
pF
dB
g
22e
-
60
-
µS
2
BF799
Total power dissipation
P
tot
=
f(T
S
)
320
mW
240
P
tot
200
160
120
80
40
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
Permissible Pulse Load
R
thJS
=
f
(t
p
)
Permissible Pulse Load
P
totmax
/P
totDC
=
f
(t
p
)
10
3
10
3
P
totmax
/ P
totDC
K/W
-
10
2
10
2
10
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
R
thJS
10
1
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
p
10
0
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
3
2011-09-21
BF799
Transition frequency
f
T
=
f
(I
C
)
f
= 100MHz
BF 799
EHT07116
Collector-base capacitance
C
cb
=
f
(V
CB
)
f
= 1 MHz
BF 799
EHT07117
1200
f
T
MHz
1000
1.5
C
cb
pF
V
CE
= 5 V
800
1.0
600
2V
400
0.5
200
0
0
10
20
30
40 mA 50
0
0
10
V
V
CB
20
Ι
C
4
2011-09-21
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