DSS5160T
60V LOW V
CE(sat)
PNP SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
Case: SOT23
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
C
SOT23
B
C
E
B
E
Top View
Device Symbol
Pin-Out Top
Ordering Information
(Note 3)
Product
DSS5160T-7
Notes:
Marking
ZP9
Reel size (inches)
7
Tape width (mm)
8mm
Quantity per reel
3,000
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
ZP9
ZP9 = Product Type Marking Code
DSS5160T
Document number: DS35532 Rev. 1 - 2
1 of 6
www.diodes.com
January 2012
© Diodes Incorporated
DSS5160T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Base Current (DC)
Peak Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
Value
-80
-60
-5
-1
-2
-300
-1
Unit
V
V
V
A
A
mA
A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θJA
R
θ
JA
T
J
, T
STG
Value
725
172
79
-55 to +150
Unit
mW
°C/W
°C/W
°C
4. Operated under pulsed conditions: pulse width
≤100ms,
duty cycle
≤
0.25.
5. Device mounted on 15mm x 15mm x1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
Thermal Characteristics
- I
C
Collector Current (A)
10
Limit
1
15mm x 15mm
1oz FR4
Max Power Dissipation (W)
V
CE(sat)
T
amb
=25°C
0.8
0.6
100m
DC
1s
100ms
10ms
1ms
100µs
0.4
10m
1m
0.2
100µ
0.1
1
10
100
0.0
0
20
40
60
80
100 120 140 160
-V
CE
Collector-Emitter Voltage (V)
Safe Operating Area
180
T
amb
=25°C
Temperature (°C)
Derating Curve
Single Pulse
T
amb
=25°C
Thermal Resistance (°C/W)
160
140
120
Maximum Power (W)
1k
100
100
D=0.5
80
60
40
20
0
100µ
1m
10m 100m
D=0.2
Single Pulse
D=0.05
D=0.1
10
1
100µ
1m
10m 100m
1
10
100
1k
1
10
100
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
DSS5160T
Document number: DS35532 Rev. 1 - 2
2 of 6
www.diodes.com
January 2012
© Diodes Incorporated
DSS5160T
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain (Note 6)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
Min
-80
-60
-5
⎯
⎯
⎯
200
150
100
⎯
⎯
⎯
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
Transition Frequency
Output Capacitance
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes:
Collector-Emitter Saturation Voltage (Note 6)
V
CE(sat)
R
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
ob
t
on
t
d
t
r
t
off
t
s
t
f
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
75
35
40
265
230
35
Max
⎯
⎯
⎯
-100
-50
-100
⎯
⎯
⎯
-175
-180
-340
340
-1.1
-0.9
⎯
15
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
V
V
nA
μA
nA
⎯
mV
mΩ
V
V
MHz
pF
ns
ns
ns
ns
ns
ns
Test Conditions
I
C
= -100μA
I
C
= -10mA
I
E
= -100μA
V
CB
= -20V, I
E
= 0
V
CB
= -20V, I
E
= 0, T
A
= 150°C
V
EB
= -5V, I
C
= 0
V
CE
= -5V, I
C
= -1mA
V
CE
= -5V, I
C
= -500mA
V
CE
= -5V, I
C
= -1A
I
C
= -100mA, I
B
= -1mA
I
C
= -500mA, I
B
= -50mA
I
C
= -1A, I
B
= -100mA
I
E
= -1A, I
B
= -100mA
I
C
= -1A, I
B
= -50mA
V
CE
= -5V, I
C
= -1A
V
CE
= -10V, I
C
= -50mA,
f = 100MHz
V
CB
= -10V, f = 1MHz
⎯
⎯
⎯
150
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
CC
= -10V, I
C
= -0.5A,
I
B1
= I
B2
= -25mA
6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
DSS5160T
Document number: DS35532 Rev. 1 - 2
3 of 6
www.diodes.com
January 2012
© Diodes Incorporated
DSS5160T
800
700
h
FE
, DC CURRENT GAIN
600
T
A
= 150°C
V
CE
= -5V
1
I
C
/I
B
= 10
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.1
T
A
= 150°C
T
A
= 85°C
T
A
= 25°C
500
T
A
= 85°C
400
300
200
T
A
= -55°C
T
A
= 25°C
0.01
T
A
= -55°C
100
0
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
1
0.001
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
V
CE
= -5V
-V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
-V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
1.0
1.0
I
C
/I
B
= 10
0.8
T
A
= -55°C
0.8
T
A
= -55°C
0.6
T
A
= 25°C
0.6
T
A
= 25°C
0.4
T
A
= 85°C
0.4
T
A
= 85°C
0.2
T
A
= 150°C
0.2
0
0.1
T
A
= 150°C
0
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
180
f = 1MHz
150
CAPACITANCE (pF)
120
90
60
C
ibo
30
0
0.1
C
obo
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 9 Typical Capacitance Characteristics
DSS5160T
Document number: DS35532 Rev. 1 - 2
4 of 6
www.diodes.com
January 2012
© Diodes Incorporated
DSS5160T
Package Outline Dimensions
A
B C
H
K
D
J
F
G
L
M
K1
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
-
-
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
-
α
All Dimensions in mm
Suggested Pad Layout
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
DSS5160T
Document number: DS35532 Rev. 1 - 2
5 of 6
www.diodes.com
January 2012
© Diodes Incorporated
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