Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SUR50N06-07L-E3 Parametric
Parameter Name
Attribute value
Is it Rohs certified?
conform to
Maker
Vishay
package instruction
,
Reach Compliance Code
unknown
Configuration
Single
Maximum drain current (Abs) (ID)
96 A
FET technology
METAL-OXIDE SEMICONDUCTOR
Operating mode
ENHANCEMENT MODE
Maximum operating temperature
175 °C
Polarity/channel type
N-CHANNEL
Maximum power dissipation(Abs)
136 W
surface mount
YES
SUR50N06-07L-E3 Preview
SUR50N06-07L
Vishay Siliconix
N-Channel 60-V (D-S), 175 °C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
60
r
DS(on)
(Ω)
0.0074 at V
GS
= 10 V
0.0088 at V
GS
= 4.5 V
I
D
(A)
c
96
88
FEATURES
• TrenchFET
®
Power MOSFET
• 175 °C Junction Temperature
RoHS
COMPLIANT
APPLICATIONS
• Secondary Synchronous Rectification
TO-252
Reverse Lead DPAK
D
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information:
SUR50N06-07L-E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Repetitive Avalanche Energy
a
Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
C
= 25 °C
T
C
= 100 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
60
± 20
96
c
67
c
100
45
101
136
- 55 to 175
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
b
Junction-to-Case
t
≤
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
15
40
0.85
Maximum
18
50
1.1
°C/W
Unit
Notes:
a. Duty cycle
≤
1 %.
b. Surface Mounted on 1" FR4 board.
c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A.
Document Number: 73561
S-71662-Rev. B, 06-Aug-07
www.vishay.com
1
SUR50N06-07L
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
DS
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 °C
V
GS
= 4.5 V, I
D
= 20 A
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
°C)
b
50
100
I
F
= 30 A, V
GS
= 0 V
I
F
= 30 A, di/dt = 100 A/µs
0.90
37
1.50
55
A
V
ns
I
S
I
SM
V
SD
t
rr
V
DD
= 30 V, R
L
= 0.6
Ω
I
D
≅
50 A, V
GEN
= 10 V, R
g
= 2.5
Ω
V
DS
= 30 V, V
GS
= 10 V, I
D
= 50 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
5800
450
300
96
19
20
1.5
15
13
62
14
25
20
95
25
ns
Ω
144
nC
pF
g
fs
V
DS
= 15 V, I
D
= 15 A
20
0.0071
80
50
0.0061
0.0074
0.0122
0.0148
0.0088
S
Ω
60
1
3
± 100
1
50
150
A
µA
V
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
Source-Drain Diode Ratings and Characteristics
(T
C
= 25
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
http://www.vishay.com/ppg?73561.
www.vishay.com
4
Document Number: 73561
S-71662-Rev. B, 06-Aug-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
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