BCW69 and BCW70
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistor (PNP)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
Top View
Mounting Pad Layout
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
0.031 (0.8)
1
2
max. .004 (0.1)
0.035 (0.9)
0.079 (2.0)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
0.037 (0.95)
0.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Features
•
•
•
•
PNP Silicon Epitaxial Planar Transistors
Suited for low level, general purpose applications.
Low current, low voltage.
As complementary types, BCW71 and BCW72
NPN transistors are recommended.
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Marking Code:
BCW69 = H1
BCW70 = H2
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Maximum Ratings & Thermal Characteristics
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Note:
(1) Mounted on FR-4 printed-circuit board.
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
–V
CBO
–V
CEO
–V
EBO
–I
C
–I
CM
–I
BM
P
tot
R
ΘJA
T
j
T
STG
Value
50
45
5.0
100
200
200
250
500
(1)
150
–65 to +150
Unit
V
V
V
mA
mA
mA
mW
°C/W
°C
°C
Document Number 88174
09-May-02
www.vishay.com
1
BCW69 and BCW70
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
Parameter
BCW69
BCW70
BCW69
BCW70
J
= 25°C unless otherwise noted)
Symbol
Test Condition
–V
CE =
5 V, –I
C
= 10
µA
Min
—
—
120
215
—
—
—
—
600
—
—
100
—
—
Typ
90
150
—
—
80
150
720
810
—
—
—
—
4.5
2
Max
—
—
260
500
300
—
—
—
750
100
10
—
—
6
Unit
DC Current Gain
h
FE
–V
CE =
5 V, –I
C
= 2 mA
= 10 mA, –I
B
= 0.5 mA
–I
C
= 50 mA, –I
B
= 2.5 mA
= 10 mA, –I
B
= 0.5 mA
–I
C
= 50 mA, –I
B
= 2.5 mA
–
V
CE
–
I
C
–
I
C
—
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector Cut-off Current
–V
CEsat
–V
BEsat
–V
BE
–I
CBO
mV
mV
mV
nA
µA
MHz
pF
dB
= 5 V, –I
C
= 2 mA
–V
CB
= 20 V, V
EB
= 0
–V
CB
= 20 V, V
EB
= 0,
T
A
= 100°C
–V
CE
= 5 V, –I
C
= 10 mA
f = 100 MHz
–V
CB
= 10 V, f = 1 MHz, I
E
= 0
–V
CE
= 5 V, –I
C
= 200
µA,
R
S
= 2 kΩ, f = 100 kHz,
B = 200 Hz
Gain-Bandwidth Product
Collector-Base Capacitance
Noise Figure
f
T
C
CBO
F
www.vishay.com
2
Document Number 88174
09-May-02
Integrated technical exchanges
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