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DISCRETE SEMICONDUCTORS
DATA SHEET
BCW69; BCW70
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 Apr 19
2004 Feb 06
NXP Semiconductors
Product data sheet
PNP general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BCW71 and BCW72.
MARKING
TYPE NUMBER
BCW69
BCW70
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
BCW69
BCW70
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base; I
C
=
−2
mA
open collector
−
−
−
−
−
−
−
−65
−
−65
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING CODE
(1)
H1*
H2*
Top view
handbook, halfpage
BCW69; BCW70
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
MIN.
MAX.
−50
−45
−5
−100
−200
−200
250
+150
150
+150
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
2004 Feb 06
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BCW69
BCW70
DC current gain
BCW69
BCW70
V
CEsat
V
BEsat
V
BE
C
c
f
T
F
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−2
mA; V
CE
=
−5
V
I
E
= I
e
= 0; V
CB
=
−10
V;
f = 1 MHz
I
C
=
−10
mA; V
CE
=
−5
V;
f = 100 MHz
I
C
=
−200 μA;
V
CE
=
−5
V;
R
S
= 2 kΩ; f = 1 kHz; B = 200 Hz
I
C
=
−2
mA; V
CE
=
−5
V
120
215
−
−
−600
−
100
−
I
C
=
−50
mA; I
B
=
−2.5
mA; note 1
−
I
C
=
−50
mA; I
B
=
−2.5
mA; note 1
−
CONDITIONS
I
E
= 0; V
CB
=
−20
V
I
E
= 0; V
CB
=
−20
V; T
j
= 100
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−10 μA;
V
CE
=
−5
V
−
−
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
BCW69; BCW70
VALUE
500
UNIT
K/W
MIN.
−
−
−
TYP.
−
−
−
90
150
−
−
−80
−150
−720
−810
−
4.5
−
−
MAX.
−100
−10
−100
−
−
260
500
−300
−
−
−
−750
−
−
10
UNIT
nA
μA
nA
mV
mV
mV
mV
mV
pF
MHz
dB
2004 Feb 06
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
BCW69; BCW70
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Feb 06
4
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