MS8512FKLI-10 datasheet, PDF - EEWORLD Datasheet

MS8512FKLI-10: DescriptionSRAM Module, 512KX8, 100ns, CMOS; Categorystorage storage; File Size221KB，6 Pages; ManufacturerAPTA Group Inc

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MS8512FKLI-10 Overview

SRAM Module, 512KX8, 100ns, CMOS

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	APTA Group Inc
package instruction	DIP, DIP32,.6
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	100 ns
I/O type	COMMON
JESD-30 code	R-XDMA-T32
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX8
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.00028 A
Minimum standby current	2 V
Maximum slew rate	0.081 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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