FT101ASH5U/
FT201ASH5U/FT301ASH5U
Features
•
•
•
•
•
•
•
Offset voltage 3 mV maximum over temperature
Input current 100 nA maximum over
temperature
Offset current 20 nA maximum over
temperature
Guaranteed drift characteristics
Offsets guaranteed over entire common mode
and supply voltage ranges
Slew rate of 10V/us as a summing amplifier
High RadHard. . . . . . . . . . . . . . . 10
5
rad
Pinout
8‐lead metal can
Top View
Package pinout
Operational Amplfiers
The FT101ASH5U is a general purpose operational amplifier
which features improved performance over industry standards
such as the LM709. Advanced processing techniques make
possible an order of magnitude reduction in input currents, and a
redesign of the biasing circuitry reduces the temperature drift of
input current. This amplifier offers many features which make its
application nearly foolproof: overload protection on the input and
output, no latch up when the common mode range is exceeded,
and freedom from oscillations and compensation with a single
30pF capacitor. It has advantages over internally compensated
amplifiers in that the frequency compensation can be tailored to
the particular application. For example, in low frequency circuits it
can be overcompensated for increased stability margin. Or the
compensation can be optimised to give more than a factor of ten
improvement in high frequency performance for most applications.
In addition, the device provides better accuracy and lower noise in
high impedance circuitry. The low input currents also make it
particularly well suited for long interval integrators or timers,
sample and hold circuits and low frequency waveform generators.
Further, replacing circuits where matched transistor pairs buffer
the inputs of conventional IC op amps, it can give lower offset
voltage and a drift at a lower cost.
Rev. 1
1 of 8
May 2013
FT101ASH5U/
FT201ASH5U/FT301ASH5U
Absolute Maximum Ratings
Supply Voltage ±22V
Differential Input Voltage ±30V
Input Voltage(Note 2) ±15V
Output Short Circuit Duration(Note 3) Continuous
Total Power 750mW
Storage Temperature Range ‐65⁰C <Ta<+150⁰C
ESD Tolerance(Note 4) 3500V
Notes:
2.
The maximum power dissipation must be derated
at elevated temperatures and is
dictated by Tjmax (maximum junction
temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient
temperature). The maximum allowable
power dissipation at any temperature is Pdmax =
(Tjmax ‐ TA)/ThetaJA or the number
given in the Absolute Maximum Ratings,
whichever is lower.
3.
For supply voltages less than +15V, the absolute
maximum input voltage is equal to the supply
voltage.
Human body model, 100 pF discharged through
4.
1.5k Ohms.
Thermal Information
Thermal Resistance (typical) θ
JA
= 170 °C/W (note 1)
θ
JC
= 85 °C/W (note 2)
Maximum Junction Temperature 150⁰C
Lead Temperature
(Soldering, 10 seconds) 300⁰C
Notes:
5.
θ
JA
is measured with component on an
evaluation PC board in free air
6. For θ
JC
“case temp” location is the center of
metal can
Electrical Specifications
V
SUPPLY
= ± 15 V
Parameter
Temp., °C
FT101ASH5U/
FT201ASH5A
Min
Typ
Max
Input Characteristics
‐2
0.5
2
‐3
‐
3
‐3
‐
3
‐15
‐
‐
‐
‐10
‐10
‐20
‐0.1
‐0.2
10
30
15
45
‐
‐
‐
0.05
0.07
2 of 8
FT301ASH5J
Min
‐2
‐3
‐3
‐15
‐
‐
‐
‐10
‐10
‐20
‐0.1
‐0.2
Typ
0.5
‐
‐
10
30
20
35
‐
‐
‐
0.05
0.07
Max
2
3
3
15
75
75
100
10
10
20
0.1
0.2
May 2013
Units
Input Offset Voltage ,
Rs ≤ 50kΩ
Offset Voltage Drift ,
Rs ≤ 50kΩ
Input Bias Current
Input Offset Current
Offset Current Drift
Rev. 1
25
Tmax
Tmin
25
Tmax
Tmin
25
Tmax
Tmin
25 to Tmax
Tmin to 25
mV
µV/°C
nA
15
75
75
100
10
10
20
0.1
0.2
nA
nA/°C
FT101ASH5U/
FT201ASH5U/FT301ASH5U
Parameter
Maximum Common Mode
Voltage,R
L
=2kΩ
Minimum Common Mode
Voltage
Input Resistance
Large Signal Voltage Gain
V
OUT
=±10V,R
L
=2kΩ
Common Mode Rejection
Ratio , Rs ≤ 50kΩ
Power Supply Characteristics
Supply Current
Supply Voltage Rejection
Ratio, Rs ≤ 50kΩ
Temp.,
°C
25
Tmax
Tmin
25
Tmax
Tmin
25
25
Tmax
Tmin
25
Tmax
Tmin
25
Tmax
Tmin
25
FT101ASH5U/
FT201ASH5A
Min
Typ
Max
+11
+13
‐
+11
+13
‐
+11
+13
‐
‐
‐13
‐11
‐
‐13
‐11
‐
‐13
‐11
1.5
4
‐
Transfer characteristics
80
160
‐
80
160
‐
40
80
‐
80
96
‐
80
85
‐
80
85
‐
‐
‐
‐
80
1.5
1.2
2.0
96
2.0
2.0
3.0
‐
FT301ASH5J
Min
+11
+11
+11
‐
‐
‐
1.5
80
80
40
80
80
80
‐
‐
‐
70
Typ
+13
+13
+13
‐13
‐13
‐13
4
160
160
80
96
85
85
1.5
1.2
2.0
96
Max
‐
‐
‐
‐11
‐11
‐11
‐
‐
‐
‐
‐
‐
‐
2.0
2.0
3.0
‐
Units
V
V
kΩ
kV/V
dB
mA
dB
Typical Performance Characteristics
Rev. 1
3 of 8
May 2013
FT101ASH5U/
FT201ASH5U/FT301ASH5U
Rev. 1
4 of 8
May 2013
FT101ASH5U/
FT201ASH5U/FT301ASH5U
Die Characteristics
Die dimensions:
1.3x1.2± 0.1 mm,
51x47 ± 4 mils.
Wafer thickness 0.46± 0.02 mm,
18 ± 1 mils.
Metallisation:
type: Al, 1% Si, thickness: 1.4 ± 0.1 µm
Glassivation:
type: Phosphosilicate glass (PSG)
PSG thickness 1.2 ±0.2µm.
Worst case current density:
8∙10
4
A/cm
2
.
Substrate potential(Powered Up):
Unbiased.
Transistor count:
24.
Process:
Bipolar epitaxial.
Metallisation Mask layout
COMP
BAL,
COMP
-IN
+V
OUT
+IN
BAL
-V
Rev. 1
5 of 8
May 2013
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